Design of pixed based CMOS Image Sensor device

Abstract

In recent years, CMOS Image Sensors (CIS) have increasingly become major players on the Solid State Imaging market, the market on which Charge Coupled Devices (CCD) Highly precise circuit integration capability makes CMOS technology suitable for Implementation in single-chip imaging systems while reducing all other secondary effects. But, still there are many effects concerning the optimistic operation of the CIS device. The effects like the quantified temperature, global & local leakage and non-uniformities induced by on-chip temperature variations were some among them. Striving towards novel design of the CIS device may reduce some of these effects. With this perspective the transfer gate transistor approach was studied and possibilities of incorporating have to be explored. Various optoelectric devices can be simulated by using TCAD Sentaurus. The device, optical and the process simulation flow addresses the needs of the optoelectronic community to simulate CMOS image sensor device.