demonstrated by integrating them into 1D silicon nitride cavities or open cavities. [17,18] On the other hand, hBN can be used in an entirely monolithic approach where the devices are fabricated from the parent material that hosts SPEs. [19,20] The monolithic approach is advantageous in that emitters can be located within the high-energy field of the cavities, and can therefore be positioned in the maxima of optical modes, thus enabling the realisation of optimal coupling efficiencies as previously done for diamond, GaAs, and SiC. [21][22][23][24] This in combination with recent reports on the tunability of the SPE emission wavelength will allow to directly tune emitters to the resonant modes of devices, [25] in order to reversibly investigate effects such as Purcell enhancement from hBN SPEs.In this work, we report detailed nanofabrication protocols used to realize photonic resonators from hBN. In particular, we demonstrate microring cavities and 1D photonic crystals that exhibit high-quality factors (Q) of ≈1500. We also discuss in detail the shortcomings and benefits of a hybrid reactive ion etching-electron beam induced etching (RIE-EBIE) process that is suitable for the fabrication of large-area, suspended, and supported device structures that are made from hBN, and contain nanoscale features and highly vertical sidewalls. The nanofabrication approach presented here is suitable for other layered materials, and therefore broadly relevant to the field of photonics, as well as polaritonic, nanoelectromechanical, optoelectronic, and optomechanic systems, [26] all of which require engineering of structures with nanoscale precision.
Results and DiscussionThe fabrication process is outlined schematically in Figure 1. First, hBN flakes are transferred onto a silicon or a silicon dioxide substrate via mechanical exfoliation using sticky tape (Figure 1a). hBN has the advantage that it can be exfoliated from a larger parent crystal, to flakes that are chemically and mechanically stable/robust, with thicknesses as small as a single monolayer. Therefore, it does not require cumbersome preparation steps that are often necessary for classical bulk counterparts such as diamond and SiC. The substrate was prepatterned with trenches that are ≈5 µm deep to allow for a sufficient air gap below the suspended hBN structures. After hBN transfer (Figure 1b), residues and contaminants from the sticky tape were removed by calcination in air on a hot plate at 500 °C and subsequent annealing in Argon at 850 °C, which also increases adhesion of hBN flakes to substrates. An optical image of a suspended flake before the subsequent processing steps is shown in Figure 1c.Growing interest in devices based on layered van der Waals (vdW) materials is motivating the development of new nanofabrication methods. Hexagonal boron nitride (hBN) is one of the most promising materials for studies of quantum photonics and phonon polaritonics. A promising nanofabrication process used to fabricate several hBN photonic devices using a hybrid reactive ion et...