2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) 2012
DOI: 10.1109/edssc.2012.6482767
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Design of multi-octave band GaN-HEMT power amplifier

Abstract: This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE

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“…However, a variety of the proposed mBLCs are unsuitable for high frequency and high‐power applications. Herein large bandgap semiconductors (i.e., Silicon Carbide and Gallium Nitride [GaN]) are encouraging materials for the rising generation high‐power devices 21 . Nevertheless, GaN on SiC is a the charming for the high‐frequency solid‐state devices for the sake of having high‐current density, having enhanced thermal conductivity, being radiation hardened and having high‐power handling capability.…”
Section: Introductionmentioning
confidence: 99%
“…However, a variety of the proposed mBLCs are unsuitable for high frequency and high‐power applications. Herein large bandgap semiconductors (i.e., Silicon Carbide and Gallium Nitride [GaN]) are encouraging materials for the rising generation high‐power devices 21 . Nevertheless, GaN on SiC is a the charming for the high‐frequency solid‐state devices for the sake of having high‐current density, having enhanced thermal conductivity, being radiation hardened and having high‐power handling capability.…”
Section: Introductionmentioning
confidence: 99%