Design of memristor based low power and highly reliable ReRAM cell

Pal, Soumitra; Bose, Subhankar; Islam, Aminul

doi:10.1007/s00542-019-04582-1

Cited by 12 publications

(14 citation statements)

References 47 publications

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“…The experimental results show that after continuous reading, the offset of our structure output voltage is reduced to 78 mv. The impact of this level of offset on the final reading result is almost negligible, and it is significantly lower than the lowest offset (198 mv) of the three circuits in [18,21,27]. In terms of reading delay and power consumption, our circuit is significantly better than those in [18,27].…”

Section: Motivationmentioning

confidence: 77%

“…However, the problem of memristor state offset still exists when reading logic "0". The structure of High reliability read-write circuit based on memristor in [27] (hereinafter referred to as HRC) adds an auxiliary memristor. HRC uses MOS transistor and memristor to jointly control the read and write operations.…”

Section: Motivationmentioning

confidence: 99%

“…In order to eliminate this offset, scholars have carried out relevant research and achieved remarkable results [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34]. They can be divided into two categories: one is completely composed of memristors.…”

Section: Introductionmentioning

confidence: 99%

“…The memory cell has good performance and stability in terms of read-write time and switching power consumption. The circuit proposed by Soumitra Pal et al in [27] consists of two memristors and four MOS transistors. Two memristors are connected in parallel with opposite polarity.…”

Section: Introductionmentioning

confidence: 99%

“…Section 2 briefly explains the motivation and contribution of this paper. Section 3 introduces the principle of the memristor in detail, and analyzes the mechanism and existing problems of the circuit proposed in [18,21,27]. Section 4 introduces the principle and advantages of the circuit proposed in this paper.…”

Section: Introductionmentioning

confidence: 99%

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Memristor-Based Read/Write Circuit with Stable Continuous Read Operation

Bao

Zheng

et al. 2022

Electronics

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In recent years, computation-intensive applications, such as artificial intelligence, video processing and encryption, have been developing rapidly. On the other hand, the problems of “storage wall” and “power consumption wall” for the traditional storage and computing separated architectures limit the computing performance. The computational circuits and memory cells based on nonvolatile memristors are unified and become a competitive solution to this problem. However, there are various problems that prevent memristor-based circuits from entering practical applications, one of which is the memristor state deviation problem caused by continuous reading. In this paper, we study some circuits studied by predecessors on read/write circuit, compare the experimental results, analyze the reason for the resistance state deviation of memristor, and put forward a new parallel structure of memristor based on opposite polarity. The logic “1” and logic “0” are represented by the positive and negative voltage difference of two memristors with opposite polarity, which can effectively alleviate the problem of the resistance state deviation caused by continuous reading. A reading voltage of 2 V is applied to the four circuits at the same time, and continuous reading is carried out until the output voltage becomes stable. The voltage offset of the optimized circuit when reading logic “0” is reduced to 78 mV, which is significantly smaller than that of other circuits. In addition, when reading logic “1”, it has the effect of enhancing the information stored in the memristor.

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Section: Motivationmentioning

confidence: 77%

Section: Motivationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Memristor-Based Read/Write Circuit with Stable Continuous Read Operation

Bao

Zheng

et al. 2022

Electronics

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Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

Tominov

Avilov

Вакулов

et al. 2022

Adv Elect Materials

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Electrochemical anodization is a powerful method for the preparation of oxide thin films with controlled thickness, structure, and composition and proves as a promising approach to be applied to memristive devices. Here, experimental studies on titanium oxide nanoscale structures produced by local anodic oxidation and the influence of the thickness on the memristive properties are presented. Controllable preparation of forming‐free memristive cells with switching voltages less than 3 V are demonstrated. The chemical composition and oxidation state of the elements in the TiOx nanostructures are analyzed by means of X‐ray photoelectron spectroscopy, which reveals the formation of TiO2 (458.4 eV), Ti2O3 (456.6 eV), and TiO (454.8 eV). The increasing thickness of the devices from 4.5 ± 0.7 to 7.9 ± 0.3 nm leads to a decrease in the OFF to ON resistance ratio from 250 to 10.7, respectively. The mechanism of formation and resistive switching in the anodic devices is also discussed. The results can be applied to the design and development of technological processes for memristive structure manufacturing based on electrochemical oxidation.

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