Design of Low Phase-Noise Oscillators and Wideband VCOs in InGaP HBT Technology

Kuylenstierna, Dan; Lai, Szhau; Bao, Mingquan; Zirath, Herbert

doi:10.1109/tmtt.2012.2216893

Cited by 24 publications

(11 citation statements)

References 19 publications

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“…The phase noise performance @ 100 kHz and @ 1 MHz offsets of this VCO is better than other MMIC GaN VCOs, for comparable frequency. The 1 MHz phase noise performance is also in the same level as good MMIC GaAs-InGaP HBT VCOs [9,12].…”

Section: Figmentioning

confidence: 71%

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A MMIC GaN HEMT Voltage-Controlled-Oscillator with High Tuning Linearity and Low Phase Noise

Thi

Lai

Hörberg

et al. 2015

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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This paper presents a MMIC GaN HEMT Voltage-Controlled-Oscillator (VCO). The VCO is tunable between 6.45-7.55 GHz with good tuning linearity, average output power about 1 dBm, and a good phase noise with little variation over the tuning range. For a bias of V d /I d = 6 V/33 mA, the measured phase noise is -98 dBc/Hz @ 100 kHz and -132 dBc/Hz @ 1 MHz offset frequencies, respectively. To the author's best knowledge, this is the lowest phase noise reported for a VCO in GaN HEMT technology with comparable oscillation frequency and tuning range. The 1 MHz offset phase noise is also comparable to state-of-the-art GaAs-InGaP HBT VCOs with similar tuning range.Index Terms -Voltage-Controlled-Oscillator, MMIC, GaN, HEMT, phase noise.

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Section: Figmentioning

confidence: 71%

“…The common gate balanced Colpitts topology is chosen since it is known for low up-conversion of flicker noise. Some experimental work have also shown that the balanced Colpitts topology provides low phase noise for MMIC oscillators [8] and it is suitable for wideband tuning [9]. The transistor size is 2 × 50 µm.…”

Section: Oscillator Designmentioning

confidence: 99%

A MMIC GaN HEMT Voltage-Controlled-Oscillator with High Tuning Linearity and Low Phase Noise

Thi

Lai

Hörberg

et al. 2015

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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“…For III-V technologies, the substrate is essentially lossless and the Q factor is limited primarily by metal loss. For an oscillator with integrated resonant tank, the Q factor is typically < 30 in the frequency range of 5-10 GHz [1,3,6,12]. In contrast as shown in Fig.…”

Section: Oscillator Design With Low Phase Noisementioning

confidence: 99%

“…However, the DRO is usually bulky and costly compared with the monolithic oscillator. Therefore research on design of compact and low-cost monolithic oscillators with low phase noise have attracted extensive attention in the last years [1,[3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. To achieve low phase noise, heterojunction bipolar transistor (HBT) based designs are inherently better than the field effect transistor (FET) based ones because HBT device has inherently lower flicker noise corner frequency than the FET device [3].…”

Section: Introductionmentioning

confidence: 99%

Design of an oscillator with low phase noise and medium output power in a 0.25 µm GaN‐on‐SiC high electron‐mobility transistors technology

Liu

Zhu

Boon

et al. 2015

IET Microwaves, Antennas & Propagation

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To investigate the effects of both the drain and gate bias voltages on the performance of GaN high electronmobility transistors (HEMT) oscillator, a 0.25 µm GaN-on-SiC HEMT oscillator is presented in this study. Utilising the designed oscillator, the trade-off between phase noise and output power is effectively investigated at the circuit level. As a result, the designed oscillator can provide low phase noise and medium output power simultaneously. The phase noise at V GS = −2.3 V and V DS = 3.3 V is measured to be −112 dBc/Hz and −143 dBc/Hz at 100 kHz offset and 1 MHz offset, respectively, from a 4.954 GHz carrier, with an output power of more than 14 dBm. Moreover, the output power can be boosted to 26 dBm, if a drain bias 16 V is used, while good phase noise of −132 dBc/Hz @ 1 MHz is still achievable. The achieved phase noise is low among all reported GaN HEMT oscillators. This work has successfully demonstrated that the monolithic oscillator fabricated in GaN-on-SiC HEMT technology features low phase noise as well as medium output power simultaneously.

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“…The well-known figure-of-merit (FOM) formula used in [26], which takes into account not only the phase noise, but also the tuning range of the VCO, has been used for the sake of an objective comparison dBc Hz (15) where is the phase noise at a frequency offset from the carrier, is the center frequency of the operation bandwidth, and is the frequency tuning range in percent. As can be seen from Table I, the proposed system is able to increase the FOM of the state-of-the-art Hittite's VCO in 3.8 dB at 100 kHz and 7.4 dB at 1-MHz offset from the carrier, as well as clearly outperforms previous wideband FLLs.…”

Section: B Sp Fllmentioning

confidence: 99%

Ultra-Wideband VCO Phase-Noise Reduction Loop Based on a Six-Port Phase-Shifterless Delay-Line Discriminator

Ávila-Ruiz

Molina-Fernández

Moreno-Pozas

et al. 2014

IEEE Trans. Microwave Theory Techn.

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In this paper, a novel frequency-locked loop (FLL) architecture for phase-noise reduction of wideband voltage-controlled oscillators (VCO) is presented. The circuit makes use of a phase-shifterless frequency discriminator, which completely avoids the use of any control circuitry to keep the loop in its quadrature condition, highly simplifying the loop. The FLL circuit, which can be operated in a completely transparent way, can be easily interchangeable with the original VCO. An FLL prototype, based on a commercial state-of-the-art VCO, has been fabricated and measured exhibiting a phase-noise reduction higher than 9 and 5.5 dB up to 100-kHz and 1-MHz offset from carrier, respectively, in the complete 4.6-9-GHz band. Absolute phase noise results of 106.5 and 124 dBc/Hz at 100-kHz and 1-MHz offset from carrier have been obtained, showing lower phase noise than other wideband FLLs in the literature.Index Terms-Delay-line frequency discriminator (FD), frequency stabilization, frequency synthesizer, frequency-locked loop (FLL), phase-noise reduction, phase shifterless, six-port (SP), voltage-controlled oscillator (VCO).

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Design of Low Phase-Noise Oscillators and Wideband VCOs in InGaP HBT Technology

Cited by 24 publications

References 19 publications

A MMIC GaN HEMT Voltage-Controlled-Oscillator with High Tuning Linearity and Low Phase Noise

A MMIC GaN HEMT Voltage-Controlled-Oscillator with High Tuning Linearity and Low Phase Noise

Design of an oscillator with low phase noise and medium output power in a 0.25 µm GaN‐on‐SiC high electron‐mobility transistors technology

Ultra-Wideband VCO Phase-Noise Reduction Loop Based on a Six-Port Phase-Shifterless Delay-Line Discriminator

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