Design of Lead-Free Films with High Energy Storage Performance via Inserting a Single Perovskite into Bi₄Ti₃O₁₂ *

Abstract

We report a distinctive way for designing lead-free films with high energy storage performance. By inserting different single perovskite cells into Bi4Ti3O12, P–E hysteresis loops present larger maximum polarization, higher breakdown strength and smaller slim-shaped area. We prepared 0.15Bi7Fe3Ti3O21-0.5Bi4Sr3Ti6O21-0.35Bi4Ba3Ti6O21 solid solution ferroelectric films employing the sol-gel method, and obtained high energy storage density of 132.5 J/cm3 and efficiency of 78.6% while maintaining large maximum polarization of 112.3 μC/cm2 and a high breakdown electric field of 3700 kV/cm. Moreover, the energy storage density and efficiency exhibit stability over the temperature range from 20 °C to 125 °C, and anti-fatigue stability maintains up to 108 cycles. The films with a simple preparation method and high energy storage performance are likely to become candidates for high-performance energy storage materials.

Preparation and Energy Storage Performance of Perovskite Luminescent Materials by an Electrochemiluminescence Method

“…Replacing conventional energy sources with fossil fuels, including lithium-ion batteries (LIB), solar cells (solar cells), supercapacitors (SC), nanogenerators (NG), biofuel cells (BFC), and photodetectors (PDs) [17], is therefore necessary to develop self-powered systems to meet the growing demand for long-term energy use in different environmental scenarios [18][19][20]. With the development of integrated power plant, small, light, high-density and high-reliability energy systems will be better combined [21][22][23].…”

Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field

“…[6][7][8][9] As a high-k material, the leakage current of HfO 2 was low, giving it good retention properties (about 10 years). [10] This opens a new path for the development of ferroelectric field-effect transistors. [11] A memory device undergoes continuous writing, reading, and data updating, and thus requires a ferroelectric thin film to withstand the large number of switching cycles.…”

Efficiently enhanced energy storage performance of Ba2Bi4Ti5O18 film by co-doping Fe3+ and Ta5+ ion with larger radius

“…According to the formula for the recoverable energy density W rec = P m P r E dP, where P r and P m are the remnant and maximum polarizations of ferroelectric film under the external electric field E, it can be seen that high external electric field and large difference between P m and P r can obtain large recoverable energy density. [9] Therefore, the first strategy is to improve the breakdown strength so that ferroelectric film capacitors can operate in a high external electric field. The second strategy is to improve the polarizabil-ity of ferroelectric films so that they can achieve higher polarization under the same external electric field.…”