Design of integrated planar Marchand balun using physical transformer model

Huang, Chia-Hui; Chen, C. H.; Horng, Tzyy‐Sheng

doi:10.1109/apmc.2009.5384349

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…The RF and IF balancing structures are implemented as traditional coupled-lines Marchand baluns, whereas the LO balun is synthesized exploiting a bifilar planar transformer-lumped structure, similar to the one in [6], since a λ/4 distributed structure was too large at the LO frequency. In Fig.…”

Section: Mmic Mixer Description and Designmentioning

confidence: 99%

A Q/Ku-K band MMIC double-balanced subharmonic diode ring mixer for satellite communications in GaAs pHEMT technology

Resca¹,

Cignani

Florian

et al. 2014

Int. j. microw. wirel. technol.

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A MMIC double-balanced subharmonic diode ring mixer was designed for broadband satellite communications exploiting a GaAs pHEMT process. The circuit implements the frequency conversion from Q (43.5-50 GHz) to Ku-K band (17-21.5 GHz). Besides the RF, LO, and IF baluns, the MMIC integrates a buffer amplifier for the local oscillator signal, which is designed between X and Ku bands (11-16.5 GHz), due to the subharmonic operation. The mixer measured conversion loss is between 8 and 12 dB along the bandwidth, with an LO power of 9 dBm. The input p1 dB and IP3 are 2 and 15 dBm, respectively. The balanced structure ensures an LO and 2 × LO leakages at the IF port lower than 225 and 235 dBm, respectively. Other spurious remain below 267 dBc. The chip dimensions are 2.4 × 2.4 mm 2 .

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Section: Mmic Mixer Description and Designmentioning

confidence: 99%

A Q/Ku-K band MMIC double-balanced subharmonic diode ring mixer for satellite communications in GaAs pHEMT technology

Resca¹,

Cignani

Florian

et al. 2014

Int. j. microw. wirel. technol.

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“…For ICs work below 4 GHz, since the passive baluns are too bulky to realize on chip, usually active baluns are implemented [12][13][14]. For ICs work above 4 GHz, compared with active baluns [15,16], passive baluns are more intensively studied, such as lumped-element baluns [17], transformer baluns [18][19][20] and Marchand-type baluns [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Design and Integration of Compact K-Band Baluns Using Impedance Tuning Approach

Zhang¹,

Subramanian²

2012

PIER C

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Abstract-Compact K-Band CMOS baluns are designed, fabricated and characterized in a 130 nm CMOS technology. These baluns include a tunable active balun, a L-C lumped element balun, and two asymmetric planar transformer baluns. The detailed design processes are presented, including the topology selection, the transistor, inductor and transformer sizing, and the layout considerations. These topologies are compared in various aspects such as insertion loss, phase and amplitude imbalance, bandwidth, chip area, power consumption, and the difficulty to design and integration. An impedance tuning approach is implemented to chose the proper balun topology and to simply the balun integration. The baluns are on-wafer characterized and the measurement results compare the state-of-the-art realizations.

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