Design of Integrated Low Noise Amplifiers (LNA) Using Embedded Passives in Organic Substrates

Govind, V.; Dalmia, S.; Swaminathan, Madhavan

doi:10.1109/tadvp.2004.825375

Cited by 36 publications

(28 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…How ever our analysis is applicable to other structures using common source stage in the first stage. Cascode LNA with source degenerating inductor has been widely used, because of its excellent reveres isolation, good noise and gain performance and high stability [3]. This structure has been reported in many papers for below 10 GHz applications [3,5].…”

Section: Mos Model and Lna Structurementioning

confidence: 99%

“…Cascode LNA with source degenerating inductor has been widely used, because of its excellent reveres isolation, good noise and gain performance and high stability [3]. This structure has been reported in many papers for below 10 GHz applications [3,5]. However the structure is well suited for millimeter wave applications [4].…”

Section: Mos Model and Lna Structurementioning

confidence: 99%

“…In this way conjugate matching is performed in the input and then tried to force the optimum noise point close to the optimum power point [1,2]. Normally simultaneous optimization of all parameters of LNA is not possible and hence the designer should use analysis results and special optimization procedure [2,3]. Analysis results clarify the effect of circuit parameters and components in its performance, helps to primary design and guess the initial values of parameters prior to optimization, and provided that they have enough accuracy, they can directly be used to reduce the number of parameters to be optimized.…”

Section: Introductionmentioning

confidence: 99%

“…In this frequency range, the circuit analysis and design criteria have great difference from lower frequencies. A simple analytic input matching for an inductively degenerated cascode LNA has been presented in [1] and widely used in most literatures [3,5] for below 10 GHz. In this method a very simple CMOS transistor model has been used, at which the feed back capacitance and drain-source conductance have been neglected.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Analytic input matching for millimeter wave LNA in 90nm CMOS technology

Hasani

Kamarei

Ndagijimana

2007

IEICE Electron. Express

View full text Add to dashboard Cite

An analytic input matching technique for low noise amplifiers (LNA) has been presented. This method has been developed to design of cascode LNA for millimeter wave applications in modern CMOS technologies. Unlike the conventional analytic matching [1], the accurate transistor model used in our analysis, leads to acceptable accuracy in this frequency range. The analysis results have been used in design of a 30 GHz LNA for STMicroelectronics 90 nm digital CMOS process. Simulation in foundry design kit shows excellent accuracy of proposed method in comparison with the conventional method. The designed LNA have 10 dB power gain with 5 mW DC power consumption.

show abstract

Section: Mos Model and Lna Structurementioning

confidence: 99%

Section: Mos Model and Lna Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analytic input matching for millimeter wave LNA in 90nm CMOS technology

Hasani

Kamarei

Ndagijimana

2007

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…In this paper, we present novel via-only bandpass-filter designs for implementation in dielectric-layered platforms such as LTCC and organic substrates [6]. The designs are based on rigorous field-theory analysis, which takes into account higher-order mode interactions and is suitable for implementation at microwave/ millimeter-wave frequencies.…”

Section: Introductionmentioning

confidence: 99%

Microwave/millimeter wave via-only bandpass filters for LTCC applications

Bhargava

Settaluri

2005

Microw. Opt. Technol. Lett.

View full text Add to dashboard Cite

higher than 38.5 dB; and in the operating bandwidth 8.8 -9.8 GHz, the measured isolation is better than 40.5 dB. Figure 5 shows the measured and simulated E-plane and Hplane radiation patterns for port-V excitation only. The crosspolarization levels in both the E-plane and H-plane are about Ϫ30 dB in the main beam region at 9.3 GHz; for all the patterns observed (including the patterns for port H), the measured patterns are stable in the operating-frequency band and the cross-polarization levels are less than Ϫ28.5 dB. CONCLUSIONA dual-polarized stacked-microstrip patch antenna excited by both open-ended and T-shaped microstrip lines through two H-shaped slots has been studied. The antenna achieved wide high isolation (better than 40.5 dB), low cross-polarization levels (less than Ϫ28.5 dB), and stable radiation patterns, as well as broad VSWR Յ 2 bandwidths (20.7% at port V and 19.1% at port H). This antenna is suitable as an array element for spaceborne synthetic aperture radar (SAR) and active phased-radar applications. MICROWAVE/MILLIMETER WAVE VIA-ONLY BANDPASS FILTERS FOR LTCC APPLICATIONS

show abstract

Development of 5.5‐GHz Band Pass Filter in All Silicon Multilayer Substrate with Air Dielectric

Cho

Franklin

2013

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A compact 5.5‐GHz band pass filter (BPF) with 12.7% 3‐dB bandwidth is developed in an all silicon multilayer substrate with air dielectric incorporated for WiMax applications. The topology of the BPF is a capacitively coupled fifth‐order Chebyshev BPF. Its volume is 9.3 × 8.5 × 0.6 mm3. Two design aspects—air dielectric and through silicon via (TSV) technology integration—play an essential role in the BPF implementation. The spiral inductor with an integrated air dielectric has quality factor and self‐resonant frequency improvement of 112 and 41%, respectively. The TSVs in the BPF design enables the implementation of two‐layer inductors with a low value of inductance. The volume of TSV in the two‐layer inductor is 75 × 75 × 200 μm3 and its inductance is 0.15 nH at 5 GHz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2340–2345, 2013

show abstract

Design of Integrated Low Noise Amplifiers (LNA) Using Embedded Passives in Organic Substrates

Cited by 36 publications

References 18 publications

Analytic input matching for millimeter wave LNA in 90nm CMOS technology

Analytic input matching for millimeter wave LNA in 90nm CMOS technology

Microwave/millimeter wave via-only bandpass filters for LTCC applications

Development of 5.5‐GHz Band Pass Filter in All Silicon Multilayer Substrate with Air Dielectric

Contact Info

Product

Resources

About