Design of impedance-matching networks for microwave and millimeter-wave amplifier applications

Kim, Nam-Tae

doi:10.1002/1098-2760(20001020)27:2<109::aid-mop8>3.0.co;2-0

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…Fig. 4 shows the wideband output matching network [8] used for this design and the impedance trajectories in the Smith chart. The parasitic components are de-embedded based on the approximated network [9] of the CGH40006P.…”

Section: Implementation and Experimental Resultsmentioning

confidence: 99%

<i>C</i>-band general Class-J power amplifier using GaN HEMT

Huang

et al. 2016

IEICE Electron. Express

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In this paper, a C-band wideband power amplifier (PA) using a GaN HEMT is proposed. The general Class-J mode, which offer a bigger design space for the fundamental and harmonic terminations, is introduced to implement wideband PA. Then, to verify the mechanism mentioned above, a wideband PA operating from 3.5 to 6.0 GHz is proposed and fabricated. Meanwhile, the load/source harmonic and baseband impedances are also considered for the linearity. The amplifier exhibits 8-11 dB gain and 51%-64% drain efficiency (DE) covering from 3.5 to 5.5 GHz.

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Section: Implementation and Experimental Resultsmentioning

confidence: 99%

<i>C</i>-band general Class-J power amplifier using GaN HEMT

Huang

et al. 2016

IEICE Electron. Express

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Design of broadband microwave amplifier using lumped and distributed impedance transformers

Kim

2001

Micro & Optical Tech Letters

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Synthesis of impedance‐matching networks for RF‐power amplifier applications

Kim

2003

Micro & Optical Tech Letters

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The design of an RF‐power amplifier using the distributed network synthesis in order to achieve the required performance over an operating frequency range is presented. The transfer function of distributed matching circuits, which are useful for the design of RF‐power amplifiers, is derived using an equal ripple approximation. Element values of the network used to match device models are calculated in terms of minimum insertion losses and ripples for a specified network topology. To verify the performance of synthesized circuits, the results are applied to the design of an RF transistor power amplifier with an appropriate device‐modeling technique. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 207–211, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11171

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Design of impedance-matching networks for microwave and millimeter-wave amplifier applications

Cited by 5 publications

References 12 publications

<i>C</i>-band general Class-J power amplifier using GaN HEMT

<i>C</i>-band general Class-J power amplifier using GaN HEMT

Design of broadband microwave amplifier using lumped and distributed impedance transformers

Synthesis of impedance‐matching networks for RF‐power amplifier applications

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