Design of Hole-Blocking and Electron-Blocking Layers in Al<sub>x</sub>Ga<sub>1-x</sub>N-Based UV Light-Emitting Diodes

Shih, Ya-Hsuan; Chang, Jih‐Yuan; Sheu, Jinn-Kong; Kuo, Yen−Kuang; Chen, Fang‐Ming; Lee, Ming-Lun; Lai, Wei–Chih

doi:10.1109/ted.2016.2520998

Cited by 36 publications

(17 citation statements)

References 48 publications

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“…13 Furthermore, the AlN insertion layer, composition-grade LQB and EBL, and N-polar DUV LEDs are demonstrated theoretically and experimentally to improve the efficiency of LEDs. 14–18…”

Section: Introductionmentioning

confidence: 99%

“…13 Furthermore, the AlN insertion layer, composition-grade LQB and EBL, and N-polar DUV LEDs are demonstrated theoretically and experimentally to improve the efficiency of LEDs. [14][15][16][17][18] The superlattice (SL) EBL is another promising candidate to replace the bulk EBL. The periodic well/barrier structure provides a multireflection effect, enhancing electron blocking.…”

Section: Introductionmentioning

confidence: 99%

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A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm

et al. 2022

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“…13 Furthermore, the AlN insertion layer, composition-grade LQB and EBL, and N-polar DUV LEDs are demonstrated theoretically and experimentally to improve the efficiency of LEDs. 14–18…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm

et al. 2022

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“…Besides, the barrier between the p-type AlxGa1-xN electron blocking layer (EBL) and the p-type AlyGa1-yN hole supply layer is also hindering hole injection (x>y) [10]. Due to the low potential barrier difference between the quantum barrier (QB) and quantum well (QW) of UV-LEDs, carriers may cross multiple quantum wells (MQWs) active regions, such that the internal quantum efficiency (IQE) of the device is reduced [11].…”

Section: Introductionmentioning

confidence: 99%

Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer

Zhou

2021

IEEE Photonics J.

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A 365 nm AlxGa1-xN-based ultraviolet light-emitting diodes (LEDs) with double Al composition gradient last quantum barrier and hole supply layer structure has been studied. Experimental results show that the proposed structure enhances the carrier injection efficiency and suppresses the overflow of electrons. The introduction of three-dimensional hole gas further enhances the hole injection efficiency. As a result, the wall plug efficiency and electroluminescence intensity are significantly improved. In addition, the carrier concentration and the radiative recombination rate in the active region of the quantum well increases. Looking at the energy band diagram, one sees that the double Al composition gradient structure leads to higher electron blocking and alleviates the hole blocking effect. Overall, we conclude that the double Al composition gradient structure provides a pathway to achieve high-efficiency ultraviolet LEDs.

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“…Extensive research has been carried out to enhance the hole injection efficiency by tackling the issue of extra potential barrier for holes induced by the p-EBL. Early report mainly focused on band diagram engineering by modifying the epitaxial structure of p-EBL [14]- [16]. Recently, Khan et al demonstrated that reducing the thickness of quantum barrier of MQWs is also favorable for hole transport and carrier distribution in MQWs [17].…”

Section: Introductionmentioning

confidence: 99%

Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes

Liu

Zhou

et al. 2021

IEEE Photonics J.

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The hole injection efficiency is one of the bottlenecks that restricts the external quantum efficiency (EQE) and optical power of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). The polarization-induced positive sheet charges at the last quantum barrier (LQB)/electron blocking layer (EBL) interface reflect the holes back to the p-type layer and weaken the hole injection capability into the active region. In this work, we designed and incorporated a polarization-engineered AlxGa1-xN/AlyGa1-yN superlattice layer at the LQB/EBL interface. The positive sheet charges at the LQB/EBL interface can be inverted into negative charges with optimal Al compositions in the AlxGa1-xN/AlyGa1-yN superlattice layer. The electron confinement and hole injection efficiency can also be improved through increasing the effective barrier height for electrons and decreasing the effective barrier height for holes, resulting in an enhanced optical power by 29.4% and alleviated efficiency droop by 78.4% for the proposed device with an Al0.67Ga0.33N/Al0.7Ga0.3N superlattice insertion layer. The sheet charge engineering method by polarization provides an alternative approach to boost the hole injection efficiency towards an enhanced device performance for DUV LEDs.

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Design of Hole-Blocking and Electron-Blocking Layers in Al_xGa_1-xN-Based UV Light-Emitting Diodes

Cited by 36 publications

References 48 publications

A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm

A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm

Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer

Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes

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Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

Cited by 36 publications

References 48 publications

A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm

A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm

Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer

Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes

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Design of Hole-Blocking and Electron-Blocking Layers in Al_xGa_1-xN-Based UV Light-Emitting Diodes