Design of highly stable, high speed and low power 10T SRAM cell in 18-nm FinFET technology
Appikatla Phani Kumar,
Rohit Lorenzo
Abstract:Many scientists are working to develop a static random-access memory (SRAM) cell that used little power and has good stability and speed. This work introduces a fin field effect transistor developed SRAM cell with 10 transistors (10T FinFET SRAM). A cross connected standard inverter and schmitt-trigger inverter is used in the proposed 10T FinFET SRAM cell. We introduce the schmitt trigger based SRAM cell with single-ended read decoupled and feedback-cutting approaches to enhance the static noise margin (SNM) a… Show more
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