Abstract:This work reveals the design for broadband high-power high-efficiency GaN HEMT power amplifier, operating in the frequency band ranging from 2.15 GHz to 2.65 GHz. The proposed structure is implemented using Cree GaN HEMT CGH40010 transistor. The high-power and high-efficiency performances over the broadband bandwidth are achieved using the load-pull technique. The proposed power amplifier is unconditionally stable over the entire operating frequency band. With the neatly designed matching circuits, the introdu… Show more
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