J Comput Electron
 2017
DOI: 10.1007/s10825-017-1029-0
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Design of high performance normally-off dual junction gate AlGaN/GaN heterostructure field effect transistors for high voltage application

Zhiyuan Bai
1
,
Jiangfeng Du
2
,
Zhiguang Jiang
3
et al.
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Cited by 4 publications
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