Design of compact and efficient polarization-insensitive taper coupler for SiGe photonic integration

Zhou, Heng; Sun, Junqiang; Gao, Jianfeng; Jiang, Jialin; Zhou, Yang

doi:10.1364/oe.24.023784

Cited by 5 publications

(3 citation statements)

References 31 publications

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“…On the other side, compact isolation design is excluded to maintain the biaxial tensile strain of the suspended microbridge structure, resulting in parasitic capacitance. To increase the operating speed of the suspended microbridge device, the modulator structure, such as the taper waveguide coupler, active waveguide length, should be adapted to achieve a compact design and better isolation [34].…”

Section: High Frequency Responsementioning

confidence: 99%

Demonstration of biaxially tensile-strained Ge/SiGe multiple quantum well (MQW) electroabsorption modulators with low polarization dependence

et al. 2020

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We demonstrate a novel biaxially tensile-strained Ge/SiGe multiple quantum well (MQW) electroabsorption modulator with low polarization dependence. The device is waveguide integrated and has a length of 900 μm. Suspended microbridge structure is utilized to introduce biaxial tensile strain to the Ge/Si0.19Ge0.81 MQWs. Light is coupled into and out of the waveguide through deeply etched facets at the ends of the waveguide. Both TE and TM polarized electroabsorption contrast ratios are tested by the use of polarization maintaining focusing lensed fiber and a linear polarizer. A polarization irrelevant contrast ratio of 4.3 dB is achieved under 0 V/2 V operation. Both simulations and experiments indicate that the demonstrated device has potential in waveguide integrated utilizations that have high requirements on polarization uniformity.

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Section: High Frequency Responsementioning

confidence: 99%

Demonstration of biaxially tensile-strained Ge/SiGe multiple quantum well (MQW) electroabsorption modulators with low polarization dependence

et al. 2020

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“…An ER of 3-4 dB was simultaneously obtained with 2-3 dB IL over 20 nm spectral ranges from 1430 to 1450 nm using a bias voltage swing between 0 and 3 V. Additionally, a low-voltage operation at 1 V and 2 V was also demonstrated. As a prospect toward reducing the taper length, in 2016, Zhou et al [69] theoretically proposed a 45-µm-long taper coupler that can be used for polarization-insensitive optical coupling between a SiGe waveguide and Ge/SiGe MQWs. Regarding evanescent integration with the SOI waveguide, Zang et al [70] recently reported in 2017 the development of an adiabatic 3D taper to assist the optical coupling between a SOI waveguide and Ge/SiGe MQW optical modulator.…”

Section: Ge/sige Quantum Well Optical Modulatorsmentioning

confidence: 99%

Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

et al. 2019

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Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorporated between SiGe barriers, allowing a strong electro-absorption mechanism of the quantum-confined Stark effect (QCSE) within telecommunication wavelengths. In this review, we respectively discuss the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells. Key performance parameters, including extinction ratio, optical loss, swing bias voltages, and electric fields, and modulation bandwidth for optical modulators, dark currents, and optical responsivities for photodetectors, and emission characteristics of the structures will be presented.

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“…Therefore, in the integrated chip, optical signal should be routed by the passive Ge-rib waveguide and access to the highmesa active waveguide, on demand. One approach is to use taper coupler [12][13][14] for efficient coupling between the GeSn active device and passive waveguides. The taper coupler is an important approach to achieve efficient vertical coupling between layers.…”

Section: Introductionmentioning

confidence: 99%

GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator With Taper Coupler for Mid-Infrared Ge-on-Si Platform

Akie

Fujisawa

Sato

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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We propose taper coupler electroabsorption modulator (EAM) composed of GeSn/SiGeSn multiple-quantum-well (MQW) on Ge-on-Si platform for mid-infrared (2 μm) integrated optical active devices. The epitaxial design is performed by calculating the absorption spectra of GeSn/SiGeSn MQW using many-body theory to investigate the extinction characteristics of GeSn MQW waveguides. Two types of taper couplers are considered for connecting Ge-rib waveguide and GeSn-MQW-highmesa waveguide efficiently. One is an adiabatic taper coupler type EAM (ATC type EAM) and it is useful for thin Ge-buffer structure in terms of the extinction ratio. Another is a resonant taper coupler type EAM (RTC type EAM) and it is superior to ATC type EAM for thick Ge-buffer. It is confirmed that RTC type EAM can obtain the high extinction characteristics with low-loss and shorter device length (6.87 dB, -3.97 dB, and 215    m) compared with conventional ATC type EAM for thick Ge-buffer (5.67 dB, -4.9 dB, and 340    m). Index Terms-Mid-infrared photonics, GeSn quantum wells

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Design of compact and efficient polarization-insensitive taper coupler for SiGe photonic integration

Cited by 5 publications

References 31 publications

Demonstration of biaxially tensile-strained Ge/SiGe multiple quantum well (MQW) electroabsorption modulators with low polarization dependence

Demonstration of biaxially tensile-strained Ge/SiGe multiple quantum well (MQW) electroabsorption modulators with low polarization dependence

Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator With Taper Coupler for Mid-Infrared Ge-on-Si Platform

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