2011
DOI: 10.1109/tcsi.2011.2123490
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Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source Capacitances

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Cited by 71 publications
(40 citation statements)
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“…Moreover, we assume that all components are linear (neglecting variations of C oss with voltage on circuit operation, as treated in [23][24][25][26].) It is also assumed that the transistor is operated at 50% duty ratio.…”
Section: Design Methodologymentioning
confidence: 99%
“…Moreover, we assume that all components are linear (neglecting variations of C oss with voltage on circuit operation, as treated in [23][24][25][26].) It is also assumed that the transistor is operated at 50% duty ratio.…”
Section: Design Methodologymentioning
confidence: 99%
“…Several works in the literature related to the Class-DE inverter have focused on the following areas: steady-state analysis with half-bridge switching network at a fixed and any duty ratio [1], [5], [9], [12] and design of inverter with with linear and nonlinear shunt MOSFET capacitances [2], [14], [16], [17]. However, a detailed steady-state analysis of a full-bridge Class-DE inverter at any duty cycle has not been reported.…”
Section: Introductionmentioning
confidence: 99%
“…The zerovoltage-switching (ZVS) and zero-derivative-switching (ZDS) conditions are satisfied, which ensure zero switching loss and improve component tolerances [8,9]. Furthermore, in order to design an accurate power amplifier circuit, it is necessary to consider adequately the frequency limitation of an active device.…”
Section: Introductionmentioning
confidence: 99%