Design of CdZnTe and Crystalline Silicon Tandem Junction Solar Cells

Zhou, Chao; Chung, Haejun; Wang, Xufeng; Bermel, Peter

doi:10.1109/jphotov.2015.2481598

Cited by 17 publications

(7 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…First, the core of the structure consists of two solar cells (CZTS solar cell and Si solar cell) with an intermediate connection. Second, the top and bottom electrodes which TCO-less tandem DSSC 7.1 [21] DSSC/CIGS 12.35 [22] DSSC/GaAs 7.63 [23] DSSC/c-Si 17.23 [24] DSSC/a-Si 18.1 [25] Perovskite/c-Si 23.6-26.4 [ 26,27] CZT/Si 16.8-34.1 [28] CZTS/Si 3.5-15 [ 5,29,30] Structures dimensions and materials properties are given in Table 2. As shown in Table 2, the studied structures are thin film solar cells.…”

Section: Device Simulationmentioning

confidence: 99%

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In₂O₃ Layer in CZTS Top Cell

Doumit

Soro

Ozocak

et al. 2021

Advcd Theory and Sims

View full text Add to dashboard Cite

While single-junction solar cells may be capable of attaining AM1.5 theoretical efficiency of 33.16%, infinite multijunction (MJ, Tandem) solar cells will have a limiting efficiency of 86.8%. Tandem solar cells based on crystalline silicon (c-Si) bottom cells are therefore attracting great interest. An interesting candidate for the top cell absorber is represented by copper zinc tin sulfide Cu 2 ZnSnS 4 (CZTS). In this work, the CZTS/Si tandem solar cell is optimized by using indium oxide / Cadmium sulfide (In 2 O 3 /CdS) hybrid buffer. This present work reports CZTS/Si solar cell with an open-circuit voltage V OC of over 0.942 V and a J SC of 34.7 mA cm − ² by adding In 2 O 3 layer in the CZTS top cell. The added In 2 O 3 layer has a thickness of 0.022 µm and is n-doped with a concentration of 1e20 cm −3 . Compared with a CZTS/Si in which the hybrid buffer is of CdS, the efficiency is increased from 13.5% to 28.4%. These hybrid In 2 O 3 /CdS buffers provide a promising way to reduce the V OC deficit and further boost the efficiency of CZTS/Si solar cells.

show abstract

Section: Device Simulationmentioning

confidence: 99%

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In₂O₃ Layer in CZTS Top Cell

Doumit

Soro

Ozocak

et al. 2021

Advcd Theory and Sims

View full text Add to dashboard Cite

show abstract

“…Blanker 1 reported a two terminal tandem configuration which utilizes copper indium gallium selenide (CIGS) thin film as top cell absorber and hydrogenated amorphous silicon absorber layers in bottom cell. The tandem structures designed with cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) in combination with silicon as a bottom cell absorber were reported by 2,3 . An analytical model has been developed for kesterite‐based tandem solar cells in Reference 4.…”

Section: Introductionmentioning

confidence: 99%

Modeling and performance optimization of two‐terminal Cu ₂ ZnSnS ₄ –silicon tandem solar cells

Vallisree¹,

Thangavel

Lenka

2021

Int J Energy Res

View full text Add to dashboard Cite

Summary A dual‐junction Cu2ZnSnS4–Silicon (CZTS–Si)‐based tandem configuration is modeled and analyzed for its viability as a solar cell. The top and bottom modules in the tandem structure are validated by comparison with experiment. Initially, the designed tandem structure yields very low efficiency of 3.18%, and the various loss mechanisms are identified and investigated. The current mismatch between top and bottom cells and parasitic absorption (photon losses) are suggested to be the major causes limiting the short circuit current and hence the efficiency of the device. We optimize the material parameters within experimentally achievable limits in order to obtain current matching, and the optimized thicknesses of copper zinc tin sulfide (CZTS) and silicon (Si) absorbers are found to be 150 nm and 250 μm, respectively. The simulation results revealed that the photon losses are reduced, and overall absorption in the longer wavelength region has enhanced with the replacement of cadmium sulfide (CdS) by zinc sulfide (ZnS) buffer and careful optimization of the front layers of the device. The maximum predicted efficiency of tandem structure is >20% by minimizing the recombination centers within the experimentally obtainable ranges and improving the carrier separation process.

show abstract

“…Rapidly growing applications of CdZnTe as a material suitable for X-ray and γ-ray detector fabrication − and for high-efficiency solar cells , have introduced the urgent need for characterization of photocarrier properties and their associated solid-state transport parameters, including their spatial distributions in wafer substrates, which affect charge transport and limit the performance of optoelectronic devices. Most popular diagnostic methods in use are current deep-level transient spectroscopy (I-DLTS), transient current technique (TCT), current and capacitance vs voltage ( I – V and C – V ) measurements, γ-ray spectroscopy, Hall measurements, and optical and thermal measurements. − Beyond those methodologies, photocarrier radiometry (PCR) is a nondestructive and noncontacting spectrally gated frequency-domain dynamic semiconductor photoluminescence (PL) diagnostic modality, which allows for the simultaneous nondestructive determination of electronic transport parameters in semiconductor substrates and devices. − Subsequently, lock-in carrierography (LIC) was introduced as a near-infrared (NIR) imaging extension of PCR, aimed at constructing quantitative images of carrier transport parameters. − Next, two-beam heterodyne LIC (HeLIC) was introduced to address the need for high-frequency photocarrier excitation, eliciting fast enough signal responses required to measure short recombination lifetimes and other fast photocarrier relaxation processes.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Imaging of Defect Distributions in CdZnTe Wafers Using Combined Deep-Level Photothermal Spectroscopy, Photocarrier Radiometry, and Lock-In Carrierography

Melnikov

Mandelis

Soral

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Trap-state kinetic parameters were investigated in CdZnTe wafers using nondestructive and noncontacting deep-level photothermal spectroscopy (DLPTS), heterodyne photocarrier radiometry (HePCR), and lock-in carrierography (HeLIC) imaging. Two electronic carrier traps were found and activation energies were measured. Using a two-trap frequency-domain rateequation theoretical model, full-wafer quantitative HeLIC images of recombination times, capture and emission coefficients, trap densities, and emission/capture relaxation times were reconstructed at 100 K. HeLIC imaging was used to discuss dynamic photocarrier interactions with CdZnTe traps. These quantitative images are very important in determining the optoelectronic behavior and the quality of CdZnTe substrate materials and fabricated devices, which is controlled by complex free-carrier density wave (CDW) and defect configuration interaction kinetic processes.

show abstract

Design of CdZnTe and Crystalline Silicon Tandem Junction Solar Cells

Cited by 17 publications

References 38 publications

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In₂O₃ Layer in CZTS Top Cell

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In₂O₃ Layer in CZTS Top Cell

Modeling and performance optimization of two‐terminal Cu ₂ ZnSnS ₄ –silicon tandem solar cells

Quantitative Imaging of Defect Distributions in CdZnTe Wafers Using Combined Deep-Level Photothermal Spectroscopy, Photocarrier Radiometry, and Lock-In Carrierography

Contact Info

Product

Resources

About

Design of CdZnTe and Crystalline Silicon Tandem Junction Solar Cells

Cited by 17 publications

References 38 publications

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In2O3 Layer in CZTS Top Cell

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In2O3 Layer in CZTS Top Cell

Modeling and performance optimization of two‐terminal Cu 2 ZnSnS 4 –silicon tandem solar cells

Quantitative Imaging of Defect Distributions in CdZnTe Wafers Using Combined Deep-Level Photothermal Spectroscopy, Photocarrier Radiometry, and Lock-In Carrierography

Contact Info

Product

Resources

About

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In₂O₃ Layer in CZTS Top Cell

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In₂O₃ Layer in CZTS Top Cell

Modeling and performance optimization of two‐terminal Cu ₂ ZnSnS ₄ –silicon tandem solar cells