Design of an Ultra-Wideband GaN Power Amplifier via Real Frequency Technique

Kılınç, Sedat; Yarman, Binboğa Sıddık

doi:10.1109/mms.2018.8612071

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…Due to the difficulty of impedance solution in designing continuous amplifiers, many scholars used network synthesis method and algorithm to optimize them. A two-port network is established by using the scattering parameters, and a lossless matching network is optimized [15,16,17,18,19]. In addition, the designer adopts the hybrid class harmonic control network to make the amplifier work in different class J/F/F −1 at different frequency points, which expands the bandwidth beyond one octave.…”

Section: Introductionmentioning

confidence: 99%

Design of multi-octave continuous power amplifier based on broadband matching technique

Guo-xiang

et al. 2020

IEICE Electron. Express

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This paper presents a multi-octave broadband continuous power amplifier based on the simplified real frequency method. By analyzing the load-pull impedance trajectory along with frequency increase at both ends of the transistor's input and output, the input impedance value of the matching circuit can be more coincident with the pull data in the wide band range, which meets the requirement of expanding the bandwidth of the power amplifier. Meanwhile, combining with simplified real frequency method, it can greatly simplify the process of designing broadband matching network. In order to verify the validity of the theory, the power amplifier is designed and fabricated. The measured results show that the maximum output power reached 42.5dBm and the drain efficiency is from 63% to 71% in the 1-3.2 GHz frequency band.

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Section: Introductionmentioning

confidence: 99%

Design of multi-octave continuous power amplifier based on broadband matching technique

Guo-xiang

et al. 2020

IEICE Electron. Express

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Ultra-Wideband Power Amplifier Design Strategy for 5G Sub-6-GHz Applications

2022

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This paper presents a strategy to design ultrawideband power amplifiers with a fractional bandwidth of approximately 200%. It exploits a simple output matching network, which consists of a series transmission lines together with a shunt stub, to compensate the output parasitic network of the device. Following this, a multisection transformer is implemented to obtain the optimal load at the intrinsic drain plane. As design examples, several output matching networks were designed for two different size GaN HEMT devices. One of these examples was implemented and characterized, and a drain efficiency from 52% to 70% and an output power between 40 dBm and 42.5 dBm were obtained, over 67% of the 5G sub-6-GHz band (i.e., 0.1 to 4 GHz). The aforementioned results, to the best of the authors’ knowledge, represent the state of the art in broadband power amplifiers.

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Design of an Ultra-Wideband GaN Power Amplifier via Real Frequency Technique

Cited by 2 publications

References 6 publications

Design of multi-octave continuous power amplifier based on broadband matching technique

Design of multi-octave continuous power amplifier based on broadband matching technique

Ultra-Wideband Power Amplifier Design Strategy for 5G Sub-6-GHz Applications

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