Abstract:In this paper we investigate the performance of an integrated n-type laterally-diffused metal oxide semiconductor (nLDMOS) transistor, using 2D TCAD simulations. This work is based on the 1 µm CMOS technology node at CDTAs clean room. The nLDMOS process uses the necessary steps extracted from logic-integrated circuits fabrication flow, which yields to local oxidation of silicon (LOCOS), single reduced surface field (RESURF)-based nLDMOS, without needing any additional masks or steps. The resulting device has a… Show more
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