Abstract:This paper presents an 8-Kbit low power SRAM for high temperature (up to 300C) applications. For reliable low voltage operation, we employed a decoupled 8T SRAM cell structure. To minimize the performance variations caused by the wide operating temperate range, supply voltage is selected in the near-threshold region. A temperature-aware bitline sensing margin enhancement technique is proposed to mitigate the impact of significantly increased bitline leakage on bitline swing and sensing window. A temperature-t… Show more
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