2020
DOI: 10.1109/tcsi.2020.2998582
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Design of a Refresh-Controller for GC-eDRAM Based FIFOs

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Cited by 4 publications
(2 citation statements)
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“…In the research article [9], author offer an original implementation of a single-well mixed 3T GC that uses the 28 nm FD-SOI technology. The proposed GC is equipped with body-bias control to increase the DRT by reducing leakage via the write port and to prolong the maximum operating frequency by forward body-biasing the read port.…”
Section: Literaturementioning
confidence: 99%
“…In the research article [9], author offer an original implementation of a single-well mixed 3T GC that uses the 28 nm FD-SOI technology. The proposed GC is equipped with body-bias control to increase the DRT by reducing leakage via the write port and to prolong the maximum operating frequency by forward body-biasing the read port.…”
Section: Literaturementioning
confidence: 99%
“…A recently suggested approach called opportunistic refreshing [13] monitors the system operation and utilizes the two-ported capability of GC-eDRAM to apply refresh with no performance loss for typical workloads and operating scenarios. The refresh controller of [14], implements an algorithm that is able to completely hide the refresh of GC-eDRAM macros that are used to implement FIFO memories. However, none of these previously proposed works can ensure 100% availability with no performance loss for the random access case.…”
Section: Introductionmentioning
confidence: 99%