Design of a novel step structure RF MEMS switch for K-band applications

Sravani, K. Girija; Guha, Koushik; Rao, K. Srinivasa

doi:10.1007/s00542-020-04943-1

Cited by 9 publications

(1 citation statement)

References 17 publications

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“…The electrostatic drive switches are hard to integrate into CMOS chip systems reason of high actuation voltages. Meanwhile, there are plenty of switches that realize good features in RF performance only at narrow bandwidth, but few that can work at all the frequencies of 5G [17][18][19]. Yongqing Xu et al (2018) presented a shunt switch with a novel structure, whose bandwidth is 40GHz [11].…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

Zhou

Deng

et al. 2023

Preprint

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This paper presents a novel radio frequency micro-electro-mechanical systems (RF MEMS) switch fabricated on a high resistivity silicon substrate. Slots, like square interleaved slots and split-ring slots, are used in the transmission-line to get better RF performance. Comparing three switch structures with different slot cells, the switch with square interleaved slots is suitable at Ka-band (26 ~ 40GHz), but the switch with split-ring slots can be applied to RF circuits at 10-60GHz. The switch with split-ring slots is optimal for the switching mechanism in diverse 5G RF circuitry. When it works at 30GHz, it shows a low insertion loss better than − 0.256dB, a low re-turn loss better than − 22dB, and the isolation is observed below − 39dB. Its “pull-down” voltage is 6.5V. Due to its outstanding performance, the proposed RF MEMS switch is suitable for various applications.

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