Design of a normally-off diamond JFET for high power integrated applications

Abstract

Normally-on (depletion mode) and normally-off (enhancement mode) diamond Junction Field Effect Transistors (JFETs) have been analyzed by means of a commercially available TCAD software. First, the parameters used for describing the incomplete ionization, avalanche, and mobility models in diamond have been discussed and assessed against the state-of-the-art. The on- and off-state electrical characteristics of diamond JFETs have been simulated with the suggested parameter values and matched with a set of available experimental data. Secondly, an optimization technique which can improve the performance of an enhancement mode diamond JFET that operates in the unipolar conduction regime has been proposed. This method takes into account the unique properties and limitations of diamond and highlights the main issues that can arise from the design of a normally-off diamond JFET. In particular, the crucial effect of the high temperature on the performance of the normally-off JFET has been investigated. The adopted technique is mainly based on a design of TCAD experiments and no mathematical algorithms have been developed for the calculation of the optimized set of parameters

Design of Diamond Power Devices: Application to Schottky Barrier Diodes

“…Finally, the Schottky barrier lowering effect was considered. All the models are described in more details in [25,[45][46][47].…”

Static and Dynamic Effects of the Incomplete Ionization in Superjunction Devices

“…NA=NA0 for NA0≥ NAcritic and ND=ND0 when ND0≥ NDcritic). In the formulas (1), the variation of the activation energy due to the Poole-Frenkel effect has been neglected whilst the Pearson and Bardeen formula which accounts for a reduction of the activation energy at high doping concentration has been considered, as in [21]. The equilibrium concentrations in a semiconductor bulk region can be evaluated by finding the Fermi energy level EF (EFN=EFP=EF at the equilibrium) which simultaneously satisfies the charge neutrality condition (n+NA=p+ND) for electrons (n) and holes (p) and the equations (1a) and (1b).…”

Новые Кластерные Вторичные Ионы Для Количественного Анализа Концентрации Атомов Бора В Алмазе Методом Времяпролетной Вторично-Ионной Масс-Спектрометрии

“…Методика количественного анализа концентрации атомов примеси в структурах алмаза оказалась очень востребованной в последнее время для послойного анализа монокристаллических пленок алмаза с дельта-слоями бора. Такие структуры рассматриваются как новый перспективный материал для современной микроэлектроники [3][4][5][6][7]. Для послойного анализа дельта-слоев требуется сочетание нескольких факторов: высокого разрешения по глубине, высокой элементной чувствительности и большого динамического диапазона регистрируемой концентрации, что не всегда достигается в экспериментах.…”