Design of a K-Band High-Linearity Asymmetric SPDT CMOS Switch Using a Stacked Transistor

Kim, Taehun; Lee, Hui Dong; Park, Bonghyuk; Jang, Seunghyun; Kong, Sunwoo; Park, Chang-Kun

doi:10.1109/lmwc.2022.3192440

Cited by 15 publications

(9 citation statements)

References 20 publications

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“…25 When utilizing the single-pole-double-throw (SPDT) Switch in transmit mode, it is crucial to take into account its high power handling requirements. 26 While MMICs may offer certain advantages, their low power handling and cost can impose limitations on available options. A discrete design can address the power constraints of the MMIC switch, but achieving broadband high isolation can prove to be challenging.…”

Section: Introductionmentioning

confidence: 99%

“…The first is based on innovative concepts that do not adhere to any specific discipline. 26,[28][29][30] The second topology is the single shunt switch, which provides limited isolation but is less complex. The third topology is the series-shunt topology, offering higher isolation.…”

Section: Introductionmentioning

confidence: 99%

“…When utilizing the single‐pole‐double‐throw (SPDT) Switch in transmit mode, it is crucial to take into account its high power handling requirements 26 . While MMICs may offer certain advantages, their low power handling and cost can impose limitations on available options.…”

Section: Introductionmentioning

confidence: 99%

“…When designing a discrete SPDT switch, there are four topologies to consider. The first is based on innovative concepts that do not adhere to any specific discipline 26,28–30 . The second topology is the single shunt switch, which provides limited isolation but is less complex.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Low‐cost ultra‐wideband discrete SPDT switch for K–Ku band in automotive applications and fifth‐generation systems

Bakhshi,

Faramarzi,

Akbari

2024

Micro & Optical Tech Letters

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The article details the development and production of an ultra‐wideband discrete single‐pole‐double‐throw (SPDT) Switch, measuring , and functioning within the 23.4–31 GHz frequency range, encompassing 24 and 28 GHz. This switch is specifically engineered to bolster high‐frequency systems in automotive and fifth‐generation applications. Our findings demonstrate that the discrete SPDT switch performs on par with integrated circuits while delivering consistent performance throughout its frequency spectrum. Furthermore, it offers a cost‐effective fabrication process. The switch exhibits an insertion loss ranging from 1.6 to 2.2 dB, with return loss and isolation surpassing 15 and 25 dB, respectively, across the majority of the frequency bandwidths.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low‐cost ultra‐wideband discrete SPDT switch for K–Ku band in automotive applications and fifth‐generation systems

Bakhshi,

Faramarzi,

Akbari

2024

Micro & Optical Tech Letters

View full text Add to dashboard Cite

show abstract

“…In contrast, the parasitic capacitance of the series element resides in the line discontinuity, where its presence has solely undesirable effects by reducing the isolation at high frequencies [13]- [15]. The shunt and series elements can also be combined in series-shunt topology to isolate inactive paths in multiple-throw switches without using quarter-wave transformers [16], [17].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches

Bajurko,

Sobolewski,

Yashchyshyn

et al. 2023

IEEE Access

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This paper presents two designs of millimeter-wave single-pole single-throw switches based on AlGaN/GaN heterostructure. The switches are based on two approaches to the travelling wave concept with Schottky barrier shunt elements integrated into a coplanar waveguide. The first design utilizes a twostage artificial transmission line topology with distributed shunt elements in Schottky diode configuration. The second one employs a single electrically large shunt element configured as a high electron mobility transistor. Both arrangements allow the switches to achieve very high operational bandwidth, exceeding 100 GHz, without the requirement for very high lithography resolution. Examined switches were fabricated in a 2-μm GaN-on-SiC process. Measurement results demonstrate upper operating frequencies exceeding 114.5 GHz starting from 14 GHz or even DC, depending on the design. The W band on-off ratio over 17 dB and 21 dB is achieved by the first and second construction, respectively. Measurements of transient parameters show that high switching speed can also be achieved (rise/fall time as low as ≤17 ns for the first construction).

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A novel X‐band CMOS asymmetric T/R switch with high‐pass TX arm and low‐pass RX arm

2023

Electronics Letters

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In this work, a novel asymmetric T/R switch is proposed. The operating principle and design equations of the proposed T/R switch topology are presented. Based on the proposed circuit topology, an X‐band asymmetric T/R switch is designed in 0.18‐µm CMOS. From 9 to 11 GHz, the measured isolation is higher than 32 dB and the measured insertion loss is less than 1.87 dB for the TX mode. At 10 GHz, the measured TX‐mode I-0.16emP1dB$I\!P_\mathrm{1dB}$ is higher than 36 dBm.

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Design of a K-Band High-Linearity Asymmetric SPDT CMOS Switch Using a Stacked Transistor

Cited by 15 publications

References 20 publications

Low‐cost ultra‐wideband discrete SPDT switch for K–Ku band in automotive applications and fifth‐generation systems

Low‐cost ultra‐wideband discrete SPDT switch for K–Ku band in automotive applications and fifth‐generation systems

AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches

A novel X‐band CMOS asymmetric T/R switch with high‐pass TX arm and low‐pass RX arm

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