Design of a GaN-based, 9-level flying capacitor multilevel inverter with low inductance layout

Modéer, Tomas; Barth, Christopher; Pallo, Nathan; Chung, Won Ho; Foulkes, Thomas; Pilawa-Podgurski, Robert C. N.

doi:10.1109/apec.2017.7931062

Cited by 66 publications

(12 citation statements)

References 11 publications

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“…• 𝐹 𝑜𝑝𝑡 (11) This analysis shows that the proposed measurement system can operate in the entire range defined by the area below a particular trace in Figure 4, from low to very high switching frequencies. However, in low frequencies we have the additional option to take multiple samples within the same state to suppress the noise and increase the measurement accuracy.…”

Section: Twindow(max)mentioning

confidence: 87%

“…To find the optimum point where the sample intake is maximized, we take the derivative of ( 6) equal to zero, as expressed in (10). Substituting the latter into (6) yields the global maximum of the repetitive sequences in (11), which describes a linear relation to…”

Section: Sensitivity Analysismentioning

confidence: 99%

“…Among different MLI topologies [5], the flying capacitor (FC) GaN inverter has the highest potential for miniaturization [6]- [11], due to the absence of clamping diodes and the redundancy of switching states. But like any MLI, reliable operation of the FC inverter requires a balancing mechanism to ensure that the capacitor voltages remain constant.…”

Section: Introductionmentioning

confidence: 99%

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A Clamping-Circuit-Based Voltage Measurement System for High-Frequency Flying Capacitor Multilevel Inverters

Kampitsis

Batzelis

Mitcheson

et al. 2022

IEEE Trans. Power Electron.

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In an era where high-frequency flying capacitor (FC) multilevel inverters (MLI) are increasingly gaining attention in energy conversion systems that push the boundaries of power density, the need for a compact, fast, and accurate FC voltage monitoring is also increasing. In this paper we designed and developed a new FC measurement system, based on precise sampling of the inverter switching node voltage, through a bidirectional clamping circuit. The deviation of FC voltages from their nominal values are extracted by solving a set of linear equations. With a single sensor per phase and no isolation requirements, as opposed to dozens of sensors in traditional FC monitoring, our approach results in significantly lower cost, complexity, and circuit-size. Detailed device-level simulations in LTspice and system-scale simulations in Matlab, validate the accuracy and speed of the proposed measurement system and the balancing strategy in steady state, abrupt load change and imbalance conditions. Experiments carried out in a 3-phase Gallium-Nitride 5-level inverter prototype, reveal a gain in precision and bandwidth that is more than 30 times that of conventional methods, at a fraction of their cost and footprint. The recorded performance renders the developed sensor an ideal solution for fast MLIs based on wide-bandgap technology.

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Section: Twindow(max)mentioning

confidence: 87%

Section: Sensitivity Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Clamping-Circuit-Based Voltage Measurement System for High-Frequency Flying Capacitor Multilevel Inverters

Kampitsis

Batzelis

Mitcheson

et al. 2022

IEEE Trans. Power Electron.

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“…Datasheet 0 0.28 all [25] Boost 356 40 50 [26] Inverter 333 10 30 [27] Inverter 417 60 120 [28] Buck 160 50 120…”

Section: Citation Typementioning

confidence: 99%

Characterization and Modeling of Ceramic Capacitor Losses Under Large Signal Operating Conditions

Coday

Pilawa-Podgurski

2023

IEEE Open J. Power Electron.

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Recent work on hybrid switched-capacitor converters has demonstrated exceptionally high efficiencies and power densities through the use of multilayer ceramic capacitors (MLCCs). However, when used in such converters as the main energy transfer components, the capacitors experience high voltage and current ripple often under large dc voltage bias. Yet, capacitor characterization is typically done only with small signal excitation, and under low or no dc bias, yielding highly inaccurate loss models. This work presents a technique for obtaining detailed loss characterizations of MLCCs under more realistic operating conditions through a carefully designed calorimetric setup. Experimental results from several types of MLCCs are presented over a wide range of operating conditions. Finally, a linear model is presented to accurately estimate MLCC losses.

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“…An enhanced gate drive loop ensured switching safety and performance. Modeer et al [142] designed and implemented a 1000/380-V, 10-20-kW, 100-kHz, nine-level (~2.2 kW per level) flying capacitor multilevel inverter module. The innovative dual-sided layout reduced effective commutation loop inductance and enabled low ringing and fast switching.…”

Section: Single-phase Dc-ac Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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Design of a GaN-based, 9-level flying capacitor multilevel inverter with low inductance layout

Cited by 66 publications

References 11 publications

A Clamping-Circuit-Based Voltage Measurement System for High-Frequency Flying Capacitor Multilevel Inverters

A Clamping-Circuit-Based Voltage Measurement System for High-Frequency Flying Capacitor Multilevel Inverters

Characterization and Modeling of Ceramic Capacitor Losses Under Large Signal Operating Conditions

Review of GaN HEMT Applications in Power Converters over 500 W

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