Design of a folded cascode opamp with increased immunity to conducted electromagnetic interference in 0.18μm CMOS

Richelli, Anna; Matig-a, Gilbert Andrew; Redouté, Jean-Michel

doi:10.1016/j.microrel.2014.12.019

Cited by 21 publications

(14 citation statements)

References 24 publications

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“…However, a straightforward use of an RC filter is impractical because it deteriorates the phase margin and, therefore, the stability of the amplifier. A better solution is based on the RC filter connected to a replica input stage, as suggested in [19,25]; the latter topology is shown in Figure 8. Another topology, robust to EMI, is the source buffered folded cascode, which is based on a input differential pair similar to that of the SB Miller amplifier.…”

Section: Compared Topologies and Their Ac Characteristicsmentioning

confidence: 99%

A Comprehensive Comparison of EMI Immunity in CMOS Amplifier Topologies

et al. 2019

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This paper provides the results of a comprehensive comparison between complementary metal oxide semiconductor (CMOS) amplifiers with low susceptibility to electromagnetic interference (EMI). They represent the state-of-the-art in low EMI susceptibility design. An exhaustive scenario for EMI pollution has been considered: the injected interference can indeed directly reach the amplifier pins or can be coupled from the printed circuit board (PCB) ground. This is also a key point for evaluating the susceptibility from EMI coupled to the output pin. All of the amplifiers are re-designed in a United Microelectronics Corporation (UMC) 180 nm CMOS process in order to have a fair comparison. The topologies investigated and compared are basically derived from the Miller and the folded cascode ones, which are well-known and widely used by CMOS analog designers.

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Section: Compared Topologies and Their Ac Characteristicsmentioning

confidence: 99%

A Comprehensive Comparison of EMI Immunity in CMOS Amplifier Topologies

et al. 2019

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“…At middle-large frequencies, all the amplifiers exhibit a larger susceptibility to the interference and the EMI-induced offset is around 300-400 mV for a wide frequency range. In conclusion, classic CMOS amplifiers exhibit a nonnegligible dc shift induced by the interfering signals: this offset is dependent on the amplitude of the interference and increases with the EMI frequency [8], [9].…”

Section: B Emi Susceptibility Of a Digitally Based Amplifiermentioning

confidence: 90%

EMI Susceptibility of a Digitally Based Analog Amplifier in a 180-nm CMOS Process

Coccoli

Richelli

Redouté

2016

IEEE Trans. Electromagn. Compat.

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This paper investigates and reports the susceptibility to electromagnetic interference (EMI) of a digitally based analog amplifier. The amplifier has been designed in the UMC 180-nm CMOS technology with digital component blocks. Simulations as well as comparative measurements of commercial amplifiers show a superior immunity to EMI of the digitally based amplifier with respect to purely analog topologies.Index Terms-Digitally based analog amplifier, electromagnetic immunity, mixed-signal integrated circuits.

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“…Numerous techniques have thus emerged to increase the immunity of circuits against electromagnetic disturbances, as shown in [4,5], to name a few. In this context, one recent model has been developed to simulate the immunity of integrated circuits: ICIM (integrated circuit immunity modelling), which has been proposed to the IEC standard [6] and since used in several studies [7,8].…”

Section: Contextmentioning

confidence: 99%