IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society 2014
DOI: 10.1109/iecon.2014.7049142
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Design of a compact, ultra high efficient isolated DC-DC converter utilizing GaN devices

Abstract: Wide band gap semiconductor devices have a promising future in various power converter applications due to their higher performance characteristics such as high frequency, high voltage and high operating temperature. For power switching applications, wide band gap materials mainly Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are attractive. In this paper, the detailed design analysis for an ultrahigh efficient (about 99%), 1.7 kW, 50 kHz, 130V to 48V isolated dc-dc converter along with the prototyp… Show more

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Cited by 12 publications
(3 citation statements)
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References 19 publications
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“…Figure 2 show the operational waveforms of the bidirectional converter in both directions of power flow. The operation principle of the converter in buck mode and boost mode are explained in [8] and [9], respectively.…”
Section: Isolated Bi-directional Dc-dc Convertermentioning
confidence: 99%
“…Figure 2 show the operational waveforms of the bidirectional converter in both directions of power flow. The operation principle of the converter in buck mode and boost mode are explained in [8] and [9], respectively.…”
Section: Isolated Bi-directional Dc-dc Convertermentioning
confidence: 99%
“…Super junction technology in Si devices has nullified these restrictions to some extent [5,6]. Wide-bandgap (WBG) devices, such as SiC MOSFETs and GaN HEMTs, have recently attracted a lot of interest in the design of power electronics systems [7]. Wide-bandgap (WBG) devices have far quicker turn-on/off times, almost nil reverse recovery loss and significantly lower conduction losses than typical Si MOSFETs or insulated-gate bipolar transistors (IGBTs) [8].…”
Section: Introductionmentioning
confidence: 99%
“…To address this challenge, historically, modulation operating under soft-switching conditions was the only viable solution. However, the advent of Wide Band-gap Semiconductors (WBS) such as SiC or GaN devices has opened new avenues for achieving good performance while operating DAB converters under hard switching conditions [56][57][58].…”
Section: Introduction To Dual Active Bridge Converter Topologymentioning
confidence: 99%