2013
DOI: 10.1002/cta.1898
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Design of a 75‐nW, 0.5‐V subthreshold complementary metal–oxide–semiconductor operational amplifier

Abstract: This work focuses on the subthreshold design of ultra low-voltage low-power operational amplifiers. A welldefined procedure for the systematic design of subthreshold operational amplifiers (op-amps) is introduced. The design of a 0.5-V two-stage Miller-compensated amplifier fabricated with a 0.18-mm complementary metal-oxide-semiconductor process is presented. The op-amp operates with all transistors in subthreshold region and achieves a DC gain of 70 dB and a gain-bandwidth product of 18 kHz, dissipating just… Show more

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Cited by 83 publications
(65 citation statements)
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References 24 publications
(57 reference statements)
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“…The simulation results of proposed OTA1 and OTA2 have been compared with some of the reported works [14,16,26,32,[35][36][37][38] of weak inversion region. The well-known Figure of Merits (FoMs) shown in (30)(31)(32) have been used to compare the performance of these OTAs.…”
Section: Para-meters All Wi Region Operated (Se) Otasmentioning
confidence: 99%
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“…The simulation results of proposed OTA1 and OTA2 have been compared with some of the reported works [14,16,26,32,[35][36][37][38] of weak inversion region. The well-known Figure of Merits (FoMs) shown in (30)(31)(32) have been used to compare the performance of these OTAs.…”
Section: Para-meters All Wi Region Operated (Se) Otasmentioning
confidence: 99%
“…12(a) and Fig. 12 Table 6 Performance comparision of proposed OTAs to [14,16,26,32,[35][36][37][38]. [14].…”
Section: Application In G M -C Filtersmentioning
confidence: 99%
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“…Esta robustés se debe a que el amplificador cuenta con dos pares diferenciales de entrada complementarios (PMOS y NMOS), que compensan las variaciones de corriente a la salida. En la tabla 2 se comparan los resultados de las simulaciones de este trabajo, con los resultados de la investigación realizada por (Magnelli, Francesco, Felice, Gregorio, Giuseppe, 2013) Y (Tripurari & Vijaya, 2015).…”
Section: Figura 3 Margen De Faseunclassified
“…The design of integrated circuits with ultra-low power dissipation is becoming an essential requirement considering the fact that most of the present day applications are battery operated [1]. In addition, with the scaling of transistor dimensions in nano-scale CMOS technology, it is becoming important to design with low supply voltage for better reliability of the integrated circuits.…”
Section: Introductionmentioning
confidence: 99%