Design of a 32nm Independently-Double-Gated FlexFET SOI Transistor

A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET

“…Moreover, the derived value of the control factor ( ) (eq. ( 22)) agrees well with results from SILVACO [4].…”

“…Using (eq. ( 2)) the control factor [4] is represented with the following relation: SIMULATION AND MODEL VERIFICATION For the proposed model the surface potential variation is observed (Fig. 5).…”

Radio Frequency IC Design with Nanoscale DG-MOSFETs

“…A couple of French groups have recently provided a very comprehensive review of their DG-MOSFET device and circuit works in a single book [8]. Their works contain both simulation and practical implementation examples, similar to the work carried out by the AIST XMOS and XDXMOS initiative in Japan [11]- [13] as well as a unique DG-MOSFET implementation named FlexFET by the ASI Inc [14], [15]. Recently, Intel has announced the most dramatic change to the architecture of the transistor since the device was invented.…”

“…Figure15. Computation of IP 3 using two tone frequency analysis (0.99 GHz and 1.01 GHz) around 1 GHz.…”

Self consistent simulation of C-V characterization and ballistic performance of double gate SOI flexible-FET incorporating QM effects

“…Flexible-FET was proposed initially at 180 nm channel length [1]. Continuous scaling has led to the evaluation of this device at 32 nm channel length [4]. As device dimensions reach such scales, quantization of carrier energies lead to increased quantum mechanical (QM) effects which manifest themselves in measurable device parameters like threshold voltage, drive current, gate capacitance etc [5].…”