Abstract:Germanium (Ge) is envisioned as a suitable channel candidate for field-effect transistors (FET). Properties of Ge such as high carrier mobility, compatibility with Si and adaptability with high-k materials makes it comparable to silicon. This paper presents a detailed design of a 30 nm Ge based FinFET by parameter optimization using Silvaco software. Poisson and Schrodinger equation is used to come up with an analytical quantum model. The quantum model is developed based on theory of a double gate (DG) FET but… Show more
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