Design of 2-stage medium power amplifier using 0.5 &amp;#x03BC;m GaAs PHEMT for wireless LAN applications

Rasmi, Amiza; Marzuki, Arjuna; Ismail, Mohamed A.; Rahim, Ahmad Ismat Abdul; Yahya, Mohamed; Mat, A.F.A.

doi:10.1109/tencon.2008.4766538

TENCON 2008 - 2008 IEEE Region 10 Conference 2008

DOI: 10.1109/tencon.2008.4766538

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Design of 2-stage medium power amplifier using 0.5 μm GaAs PHEMT for wireless LAN applications

Amiza Rasmi

Arjuna Marzuki

Mohamed A. Ismail

et al.

Abstract: This paper presents the design and fabrication of two-stage medium power amplifier (MPA) using 0.5 µm GaAs PHEMT technology for the wireless LAN applications. The die size of this amplifier is only 1.7mm x 0.85mm. At a supply voltage of 5.0Vand 5.8 GHz operating frequency, a 2-stage MPA achieves a linear gain (S21) of 16.39 dB, P1dB of 20.18dBm, power gain of 15.15 dB and the PAE of 25.29%.

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2012

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The Design and Modeling of 2.4 and 3.5 GHz MMIC PA

Ang

2012

Advances in Monolithic Microwave Integrated Circuits for Wireless Systems

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This chapter discusses the design of MMIC power amplifiers for wireless application by using 0.15 µm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 µm and 10 fingers at 2.4 GHz and 3.5 GHz. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB compression power with 12.318% power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB compression power with 11.796% power-added efficiency (PAE). The 2.4 GHz power amplifier can be applied for Wireless LAN applications such as WiFi and WPAN whereas 3.5 GHz power amplifier for WiMax base station.

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The Design and Modeling of 2.4 and 3.5 GHz MMIC PA

Ang

2012

Advances in Monolithic Microwave Integrated Circuits for Wireless Systems

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Design of Medium Power Amplifier Using GaAs PHEMT Technology for Wireless Applications

Rasmi

2012

Advances in Monolithic Microwave Integrated Circuits for Wireless Systems

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This paper presents the design of single-stage and two-stage medium power amplifiers (MPAs) using GaAs PHEMT technology for the wireless applications. The single-stage MPA was designed using 0.15 μm GaAs PHEMT technology to be operated at 3.5 GHz whereas the two-stage MPA was designed using 0.5 μm GaAs PHEMT technology to be operated at 5.8 GHz. The MPAs employ a simple RC feedback in order to linearize the stages as well as to improve the circuit stability and to control the gain. In addition, the load-pull technique was used in order to define the optimum load and maximum output power. Therefore, the performance of the proposed amplifier in this paper is discussed in terms of stability, gain, power-added efficiency (PAE), and output power. The simulated data of the proposed MPAs is then compared with the measured data of the fabricated MPAs.

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The Design and Modeling of 30 GHz Microwave Front-End

2012

Advances in Monolithic Microwave Integrated Circuits for Wireless Systems

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This chapter aims to discuss a millimeter wave integrated circuit (MMWIC) in frequency of 30 GHz especially switch (SPDT), medium power amplifier (MPA) and low noise amplifier (LNA). The switch is developed using a commercial 0.15 µm GaAs pHEMT technology. It achieves low loss and high isolation for millimeter wave applications. The circuit and layout drawing of SPDT switch are done by using Advanced Design System (ADS) software. The layout is verified by running the Design Rules Check (DRC) to check and clear all the errors. At the operating frequency of 30 GHz, the reported SPDT switch has 1.470 dB insertion loss and 37.455 dB of isolation. It also demonstrates 26.00 dBm of input P1dB gain compression point (P1dB) and 22.975 dBm of output P1dB. At a supply voltage of 3.0 V and 30 GHz operating frequency, this two-stage LNA achieves an associated gain of 21.628 dB, noise figure (NF) of 2.509 dB and output referred 1-dB compression point (P1dB) of -11.0 dBm, the total power consumptions for the LNA is 174 mW. At a supply voltage of 6.0 V and 30 GHz operating frequency, a 2-stage MPA achieves a linear gain (S21) of 13.236 dB, P1dB of 22.5 dBm, power gain of 11.055 dB and the PAE of 14.606%. The total power consumption for the MPA is 1.122 W. The 30 GHz LNA and PA can be applied in direct broadcast satellite (DBS), automotive radar transmitter and receiver.

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Design of 2-stage medium power amplifier using 0.5 μm GaAs PHEMT for wireless LAN applications

Cited by 3 publications

References 8 publications

The Design and Modeling of 2.4 and 3.5 GHz MMIC PA

The Design and Modeling of 2.4 and 3.5 GHz MMIC PA

Design of Medium Power Amplifier Using GaAs PHEMT Technology for Wireless Applications

The Design and Modeling of 30 GHz Microwave Front-End

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