Design, Modelling and Fabrication of a 40-330 Hz Dual-Mass MEMS Gyroscope on Thick-SOI Technology

Rajaraman, V.; Sabageh, I.; French, P.J.; Pandraud, G.; Cretu, Edmond

doi:10.1016/j.proeng.2011.12.161

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…With the recent advance in microprocessing technologies, miniaturized and integrated microelectromechanical systems (MEMS) sensors and actuators have been developed [1]. Microgyroscopes [2][3][4] and accelerometers [5][6][7][8] are typical examples of such devices that are incorporated in consumer electronics and automobiles nowadays. The progress in the MEMS technology pursues more complex and various functions.…”

Section: Introductionmentioning

confidence: 99%

Thin-film piezoelectric bimorph actuators with increased thickness using double Pb[Zr,Ti]O₃layers

Inoue

Kanda

Fujita

et al. 2015

J. Micromech. Microeng.

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We studied the effects of increasing the thickness of bimorph structures containing double layers of Pb(Zr,Ti)O3 (PZT) thin films. Thick PZT films allow high-voltage application (e.g. in terms of coercive electric field and breakdown voltage) and large generative force, which are effective in microelectromechanical systems (MEMS) applications. Improvement of the deposition conditions and electrode structures facilitates the fabrication of the thin-film PZT/PZT bimorph structure. The PZT/PZT bimorph with a total thickness of 5.8 µm, deposited using a radio-frequency (RF) magnetron sputtering system is much thicker than conventional bimorph structures. The characteristics of the two piezoelectric layers were similar to each other and revealed good electric and ferroelectric characteristics with a remanent polarization of 20 µC cm−2 and a coercive electric field of 50 kV cm−1. PZT/PZT bimorph cantilevers were fabricated in order to evaluate their characteristics for actuator applications. The residual stress of the bimorph cantilever was reduced by an annealing process. The vibration test on the fabricated bimorph cantilevers during electrical voltage application revealed a twice as large displacement as compared with a single layer actuation, and the piezoelectric coefficient value d31 was estimated to be −61 pm V−1, which is better than the value of conventional PZT/PZT bimorph cantilevers (−13 pm V−1). It was also shown that the influence of the temperature change is much less than that in unimorph structures with similar dimensions. The evaluated results demonstrate that the PZT/PZT bimorph structures are effective as MEMS devices.

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Section: Introductionmentioning

confidence: 99%

Thin-film piezoelectric bimorph actuators with increased thickness using double Pb[Zr,Ti]O₃layers

Inoue

Kanda

Fujita

et al. 2015

J. Micromech. Microeng.

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show abstract

“…2,5,10,[13][14][15] This method compensates the QUER with a direct current voltage and avoids the phase problem of the modulation. 2,5,10,[13][14][15] This method compensates the QUER with a direct current voltage and avoids the phase problem of the modulation.…”

Section: Introductionmentioning

confidence: 99%

Electrostatic stiffness correction for quadrature error in decoupled dual-mass MEMS gyroscope

Cao

2014

J. Micro/Nanolith. MEMS MOEMS

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This paper proposes an electrostatic stiffness correction method for the quadrature error (QUER) in a decoupled dual-mass gyroscope structure. The QUER is caused by the imperfections during the structure manufacturing process, and the two masses usually have different QUERs. The harm contribution to the Coriolis signal is analyzed and quantified. The generating forms of QUER motion in both masses are analyzed, the correction electrodes' working principle is introduced, and a single mass individual correction method is proposed. The QUER stiffness correction system is designed based on a PI controller, and the experiments are arranged to verify the theoretical analysis. The bias stability decreases from 2.06 to 0.64 deg ∕h after the QUER correction, and the parameters of scale factor such as nonlinearly, asymmetry, and repeatability, reduce from 143, 557, and 210 ppm to 84, 242, and 175 ppm, respectively.

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Design, Modelling and Fabrication of a 40-330 Hz Dual-Mass MEMS Gyroscope on Thick-SOI Technology

Cited by 2 publications

References 3 publications

Thin-film piezoelectric bimorph actuators with increased thickness using double Pb[Zr,Ti]O₃layers

Thin-film piezoelectric bimorph actuators with increased thickness using double Pb[Zr,Ti]O₃layers

Electrostatic stiffness correction for quadrature error in decoupled dual-mass MEMS gyroscope

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Design, Modelling and Fabrication of a 40-330 Hz Dual-Mass MEMS Gyroscope on Thick-SOI Technology

Cited by 2 publications

References 3 publications

Thin-film piezoelectric bimorph actuators with increased thickness using double Pb[Zr,Ti]O3layers

Thin-film piezoelectric bimorph actuators with increased thickness using double Pb[Zr,Ti]O3layers

Electrostatic stiffness correction for quadrature error in decoupled dual-mass MEMS gyroscope

Contact Info

Product

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Thin-film piezoelectric bimorph actuators with increased thickness using double Pb[Zr,Ti]O₃layers

Thin-film piezoelectric bimorph actuators with increased thickness using double Pb[Zr,Ti]O₃layers