Design guideline and performance prediction of 'SBB' SOI MOSFETs

Feasibility Study of a Novel Four Transistor Silicon-on-Insulator Static Random Access Memory Cell Utilizing Partial Trench Isolation

“…One of the candidate device structures for such applications is the ''selfbody-biased'' (''SBB'') silicon-on-insulator (SOI) metaloxide-semiconductor field-effect transistor (MOSFET), which utilizes the expansion of the gate depletion layer beneath the auxiliary ''T-shaped'' gate electrode in order to modulate the body potential, thus enhancing its current drivability in the ''ON'' state. [1][2][3] By further modifying the gate electrode shape, the author has already proposed the ''SBB'' static random access memory (SRAM) cell operating at 0.5 V. 4,5) However this ''SBB'' SRAM cell has limited layout flexibility because it inevitably requires the ''Hshaped'' gate electrodes for realizing the cross-coupled inverter pair of the SRAM cell.…”