IEEE MTT-S International Microwave Symposium Digest, 2005. 2005
DOI: 10.1109/mwsym.2005.1516567
|View full text |Cite
|
Sign up to set email alerts
|

Design Flow and Methodology on the Design of BAW components

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2008
2008
2012
2012

Publication Types

Select...
5
1
1

Relationship

0
7

Authors

Journals

citations
Cited by 14 publications
(2 citation statements)
references
References 8 publications
0
2
0
Order By: Relevance
“…Transmit and receive bands of the US-PCS standard are close in frequency [3]. This demands BAW resonators which constitute the narrow band filters to be nearly loss-free.…”
Section: Introductionmentioning
confidence: 99%
“…Transmit and receive bands of the US-PCS standard are close in frequency [3]. This demands BAW resonators which constitute the narrow band filters to be nearly loss-free.…”
Section: Introductionmentioning
confidence: 99%
“…Metallic electrodes promoting the growth of highly c-axis oriented AlN films with single polar orientation and contributing to the confinement of the mechanical energy in the piezoelectric layer are the candidates of choice [8,9]. Metals most frequently used in BAW applications are W [10], Pt [6], and Mo [11], although many others (Al, Ta, Ti, Cu, Cr, Au, Ru, Ir) have been investigated [9,12,13,14]. So far, the besttextured AlN films deposited by sputtering have been obtained on Pt and Ir metallic surfaces, in which the {111} planes exhibit hexagonal symmetry, providing AlN films with very low values of the full width at half maximum (FWHM) of the rocking-curve (RC) around the 00·2 peak (around 0.9º for 1 μ m-thick films) [8,14] and very high piezoelectric activity.…”
Section: Introductionmentioning
confidence: 99%