Design, Fabrication and Testing of gate driver and Double Pulse Test board for SiC MOSFETs

Kar, Abhishek; Manna, Shalini; Sengupta, Mainak; Banerjee, Gourab

doi:10.1109/npec52100.2021.9672503

Cited by 6 publications

(7 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The response shows that 69 % of the academics do not deliver anything about the topic, while 78 % of the industry employers want this knowledge. The double pulse test determines the switching behaviour for a specific switch, such as IGBT and MOSFETs [1], [2], [15], [16]. The test enables the device under test (DUT) to be switched at different current levels by adjusting the double pulse timing using inductive load and DC-power supply [1], [15]- [17] while turning it on and off at that current.…”

Section: Double Pulse Test (Dpt)mentioning

confidence: 99%

“…Nowadays, wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have more attention due to their superior performance in automotive and industrial applications compared to Silicon switches [1] - [4]. The MOSFETs featured in this manuscript are the traditional Silicon (Si) MOSFET and the recent SiC-MOSFET from the enhancement mode type.…”

Section: Introductionmentioning

confidence: 99%

“…The Epitaxial Layer is the key voltage-sustaining region and is the greatest contributor to the on-state resistance of the MOSFET [12]. Accordingly, there is a need for switching devices to provide high efficiency, high switching frequency, small size, and low cost [1].…”

Section: Introductionmentioning

confidence: 99%

“…The higher critical electric field of the SiC substrate allows for higher injection doping levels, hence a greater packing density [13], [14]. Therefore, SiC offers low switching loss (lower turn-on and turn-off loss), increased thermal capabilities, and a high rating from the forward current and blocking voltage [1], [2], [6]. SiC MOSFETs have blocking voltage in the range of 1.2 kV up to 15 kV and have become an excellent contender to Si-IGBT while offering a higher switching frequency.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A Tutorial on Double Pulse Test of Silicon and Silicon Carbide MOSFETs

Masoud

Issa

Yates

2023

2023 IEEE Workshop on Electrical Machines Design, Control and Diagnosis (WEMDCD)

View full text Add to dashboard Cite

In the power electronics and machine drives area, recent advancements in power electronics devices are paving a more sustainable future. The importance of improved power devices is beneficial within the growing industry, for example, Electric Vehicles. New power devices are continuously researched to combat drawbacks like loss and switching time. The electrical engineering curriculum should be supported by market-oriented knowledge and industry skills based on the market leaders' vision and recruiting plans. Our ultimate objective is to modify the power electronics modules' curriculum and reskill our graduates to satisfy the industry's needs. This paper introduces one of the topics in power electronics which was identified as an industry requirement: the Double Pulse Test (DPT), to be highlighted in future curriculums. This test will be used as a comparison tool for two power electronic devices: Silicon MOSFET (Si-MOSFET) and Silicon Carbide MOSFET (SiC-MOSFET).

show abstract

Section: Double Pulse Test (Dpt)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Tutorial on Double Pulse Test of Silicon and Silicon Carbide MOSFETs

Masoud

Issa

Yates

2023

2023 IEEE Workshop on Electrical Machines Design, Control and Diagnosis (WEMDCD)

View full text Add to dashboard Cite

show abstract

“…One of the identified gaps in the PEMD industry is the use of outdated or inappropriate teaching materials at universities that enable the industry to obtain skilled and talented graduates [4]. For example, nowadays, wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have more attention due to their superior performance in automotive and industrial applications compared to Silicon switches [5]- [8]. However, academic curriculums are still behind to make the new graduates aware.…”

Section: Introductionmentioning

confidence: 99%

Review on Power Electronics Curriculums in Academia and Framework Development

Issa,

Al-naemi,

Al-Greer

et al. 2023

2023 58th International Universities Power Engineering Conference (UPEC)

View full text Add to dashboard Cite

The Department for Business Innovation and Skills (BIS) in the UK has recognized ensuring a good supply of talented Power Electronics engineers as a challenge. Inability to recruit high-quality engineers would drive companies out of the UK. The use of outdated or inappropriate curriculums at universities has been identified as a gap to address this challenge. Some academic institutions have well-recognized power electronics, machines and drives (PEMD) programs where their undergraduate courses are also linked to their research interests. However, other academic institutions do not provide that depth of knowledge required by the PEMD industry, considering it as optional knowledge and do not have suitable training materials. This paper reviews the current state of Power Electronics curriculums and contribute to filling the gaps in skills, talent and training for the PEMD industry by developing a framework for academic curriculum, which is supported by industrial-oriented knowledge and inputs. The developed framework has been designed to fit other disciplines also achieving wider awareness.

show abstract