Design, fabrication, and characterization of an ultraviolet silicon sensor

Berman-Mendoza, D.; Aceves-Mijares, M.; Berriel‐Valdos, L. R.; Yu, Zhinong; Falcony, C.; Domínguez-Horna, C.; Pedraza, J.

doi:10.1117/12.666968

Cited by 5 publications

(10 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It can be seen that the surface exhibits different characteristics depending on the growth temperature, which influences the size of the grains (roughness), their form, and composition. Average roughness decreases by decreasing the Tg and thickness [8]. The roughness analysis is shown in Figure 5.…”

Section: Resultsmentioning

confidence: 99%

“…For example, refractive index varies from 1.6 to 2.4 when the growth temperature is changed; also, SiO x emits visible light. These characteristics have given place to various types of applications such as waveguides, no volatile memories, light radiation, and detection devices [6-8]. Furthermore, the fabrication of SiO x films is completely compatible with complementary metal oxide semiconductor technology, providing an easy way for the optoelectronic integration on silicon.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the fabrication of SiO x films is completely compatible with complementary metal oxide semiconductor technology, providing an easy way for the optoelectronic integration on silicon. Several techniques have been employed to make thin SiO x films, such as high-dose Si ion implantation into SiO 2 films [6,9], low pressure chemical vapor deposition [8], sol–gel, hot filament chemical vapor deposition (HFCVD) [10,11], and plasma enhanced chemical vapor deposition [12], in which an improvement of the optical and structural properties as the PL emission and Si excess has been reported. In this work, HFCVD technique was used to deposit SiO x films on silicon and quartz substrates.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Morphological, compositional, structural, and optical properties of Si-nc embedded in SiO x films

et al. 2012

View full text Add to dashboard Cite

Structural, compositional, morphological, and optical properties of silicon nanocrystal (Si-nc) embedded in a matrix of non-stoichiometric silicon oxide (SiOx) films were studied. SiOx films were prepared by hot filament chemical vapor deposition technique in the 900 to 1,400°C range. Different microscopic and spectroscopic characterization techniques were used. The film composition changes with the growth temperature as Fourier transform infrared spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy reveal. High-resolution transmission electron microscopy supports the existence of Si-ncs with a diameter from 1 to 6.5 nm in the matrix of SiOx films. The films emit in a wide photoluminescent spectrum, and the maximum peak emission shows a blueshift as the growth temperature decreases. On the other hand, transmittance spectra showed a wavelength shift of the absorption border, indicating an increase in the energy optical bandgap, when the growth temperature decreases. A relationship between composition, Si-nc size, energy bandgap, PL, and surface morphology was obtained. According to these results, we have analyzed the dependence of PL on the composition, structure, and morphology of the Si-ncs embedded in a matrix of non-stoichiometric SiOx films.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Morphological, compositional, structural, and optical properties of Si-nc embedded in SiO x films

et al. 2012

View full text Add to dashboard Cite

show abstract

“…[1][2][3][5][6][7]. However, compatible techniques with complementary metal oxide semiconductor (CMOS) are preferred.…”

mentioning

confidence: 99%

“…Light emitting devices (LED) [1], single electron memories, [2] and UV photodetectors [3] are some of their interesting demonstrated devices. These potential applications have recently been of great interest for many researchers.…”

mentioning

confidence: 99%

Charge trapping and de‐trapping in Si‐nanoparticles embedded in silicon oxide films

Morales–Sánchez

Barreto

Domı́nguez

et al. 2008

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

Electrical properties of silicon nanoparticles (Si‐np's) embedded in a silicon oxide matrix were studied using MOS‐like structures. Si‐np's were created after silicon rich oxide (SRO) films were thermally annealed at 1100 °C. Capacitance–voltage (C–V) characteristics showed downward and upward peaks in the accumulation region. Current–voltage (I–V) measurements exhibited current valleys and downward and upward peaks. Current versus time (I–t) measurements were also done at a negative constant gate voltage. A switching behaviour between two current states (ON and OFF) was observed. These effects have been related to the charge trapping and de‐trapping of the Si‐np's embedded in the SRO films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract