Design, Fabrication, and Characteristic Analysis of 64 × 64 InGaAs/InP Single-Photon Avalanche Diode Array

Wang, Shuai; Ye, Han; Geng, LiYan; Xiao, Feng; Xiao, Fan; Han, Qingsheng

doi:10.1007/s11664-022-09531-9

Cited by 9 publications

(7 citation statements)

References 18 publications

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“…Since InGaAs/InP and InGaAs/InAlAs SAGCM APDs have been studied for several decades, which means there are already mature products on the market [ 104 , 105 , 106 ]. Herein, typical InGaAs APD FPAs were selected to review its current progress.…”

Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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“…In 2022, Institute of Semiconductors, Chinese Academy of Science design and fabrication a 64×64 InGaAs/InP single-photon avalanche diode (SPAD) array, which is developed for a three-dimensional (3D) imaging laser radar system at the wavelength of 1550 nm [19] , and the APD detector take SAGCM framework, the photosensitive plane diameter is 25μm and the Pixels pitch is 150μm. The majority pixels breakdown voltage is between 57V and 60V, and the dark current at the breakdown voltage is below 1nA, the photon detection efficiency at the wavelength of 1550nm is 25.72%, the dark count rate at the temperature of 223K is 9.09 kHz, the curves of photon detection efficiency and dark count rate shown in Fig.…”

Section: 4 Chongqing Optoelectronics Research Institutementioning

confidence: 99%

“…Fig. 10 PDE and DCR dependence on temperature and over bias of InGaAs SPAD [19] 4. CONCLUSION With the development of related technologies, the InGaAs SPAD arrays will become large and larger, reaching over 1K ×1K.…”

Section: 4 Chongqing Optoelectronics Research Institutementioning

confidence: 99%

Research progress of InGaAs single-photon avalanche diode arrays detector

LIANG,

YIN,

GUO

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

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“…[4,5,8,9,[13][14][15] In this paper, we propose a guardring-free planar InAlAs-APD with vertical top-illuminated SACM structure that can be fabricated by the selective Zn-diffusion process similar to the fabrication of conventional InP-APD. [16][17][18] The dark current is 3 nA at 0.9V br , and the unit responsivity is 0.4 A/W. The maximum 3 dB bandwidth of 24 GHz and a GB product of 360 GHz are simultaneously achieved for the fabricated InAlAs-APD.…”

Section: Introductionmentioning

confidence: 98%

Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gain×bandwidth product

et al. 2023

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This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode (APD) by computational simulations and experimental results. The APD adopts the structure of separate absorption, charge, and multiplication (SACM) with top-illuminated. Computational simulations demonstrate how edge breakdown effect is suppressed in the guardring-free structure. The fabricated APD experiment results showed that it can obtain a very low dark current while achieving a high gain×bandwidth (GB) product. The dark current is 3 nA at 0.9Vbr, and the unit responsivity is 0.4 A/W. The maximum 3dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for fabricated APD operating at 1.55 μm.

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Design, Fabrication, and Characteristic Analysis of 64 × 64 InGaAs/InP Single-Photon Avalanche Diode Array

Cited by 9 publications

References 18 publications

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Research progress of InGaAs single-photon avalanche diode arrays detector

Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gain×bandwidth product

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