1997
DOI: 10.1109/23.633423
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Design criteria of low-power low-noise charge amplifiers in VLSI bipolar technology

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Cited by 12 publications
(3 citation statements)
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“…Equation (10) assumes that the dark current shows a pure shot noise, so that no excess noise for charge multiplication occurs in the detector as well as no noise suppression due to space charge effects [30]. 𝐼𝐼 𝑛𝑛 is the leakage current at preamplifier input, which can be significant in case of preamplifiers using a Bipolar Junction Transistor (BJT) as input transistor [31] or low but non-negligible in case of deep sub-micron MOSFETs, MESFETs or HEMTs [32,26]. 𝑅𝑅 𝑛𝑛 is the equivalent noisy resistance connected at the preamplifier input, associated with the feedback resistance and/or the resistance used to bias the detector output electrode, if present.…”
Section: B Parallel Noise: the White Componentmentioning
confidence: 99%
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“…Equation (10) assumes that the dark current shows a pure shot noise, so that no excess noise for charge multiplication occurs in the detector as well as no noise suppression due to space charge effects [30]. 𝐼𝐼 𝑛𝑛 is the leakage current at preamplifier input, which can be significant in case of preamplifiers using a Bipolar Junction Transistor (BJT) as input transistor [31] or low but non-negligible in case of deep sub-micron MOSFETs, MESFETs or HEMTs [32,26]. 𝑅𝑅 𝑛𝑛 is the equivalent noisy resistance connected at the preamplifier input, associated with the feedback resistance and/or the resistance used to bias the detector output electrode, if present.…”
Section: B Parallel Noise: the White Componentmentioning
confidence: 99%
“…the Equivalent Noise Energy (ENE), expressed in eV r.m.s., is the energy 𝐸𝐸 that generates a signal at the output of the shaper whose mean amplitude is equal to the r.m.s. value of the noise at the shaper output itself, and so produces a mean induced charge 𝑄𝑄 𝑖𝑖𝑛𝑛𝑖𝑖 = 𝐸𝐸𝑁𝑁𝐢𝐢 𝐸𝐸𝐼𝐼 , which substituted into (31) gives…”
Section: The Concept Of Equivalent Noise Energymentioning
confidence: 99%
“…The calculation of the integral of Eq. ( 7) has been made by taking into account the technique of putting transistors in parallel when discrete transistors are used [8], or, equivalently, optimize devices area when the monolithic technology is available [9,10]. If the series noise measured for a given kind of transistor biased with a drain current I DS is e 2 o and its input capacitance is C o , then any new transistor having an input capacitance C J , obtained by paralleling many such kinds of transistors, each one biased with I DS , will have a noise given by…”
Section: The Readout For Bolometric Detectorsmentioning
confidence: 99%