Design Considerations for Energy-Efficient and Variation-Tolerant Nonvolatile Logic

Systems design for the non-volatile application must work on less energy or power. The spin-transfer torque-magnetic tunnel junction (STT-MTJ) devices added to the flip-flops which are regarded as non-volatile storage devices. Those are addresses to save the energy of that system stated by the nonvolatile logic. The changes during the production of STT-MTJ and CMOS transistors decrease the yield, which leads to overdesign as well as more energy consumption. The total processes of driver circuitry design for the tradeoffs for backup and restore performance. A new method called the novel method is introduced for flawless energy drivers for given results. The design for the backup time determination and to reduce the energy wastage are mentioned. To get an efficient output of 98% this approach needs to dissipate 5 times more energy than initially required. This method can dissipate the energy up to 26%. It also contains the nonvolatile flip-flop (NVFF) which has energy consumption more when it is used in the functional blocks.

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“…Some of the ways to reduce the leakage power are clock and power gates, transistor stacking, adaptive body biasing, etc. [5,16,17].…”

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confidence: 99%

Non-Volatile Logic Design Considerations for Energy Efficient Tolerant Variation

Prakash

Talamala

Singh

et al. 2022

IJEER

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An Energy Aware Variation-Tolerant Writing Termination Control for STT-based Non Volatile Flip-Flops

Lanuzza

Rose

Crupi

et al. 2019

2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)

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A High Performance MRAM Cell Through Single Free-Layer Dual Fixed-Layer Magnetic Tunnel Junction

et al. 2022

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Design Considerations for Energy-Efficient and Variation-Tolerant Nonvolatile Logic

Cited by 4 publications

References 33 publications

Non-Volatile Logic Design Considerations for Energy Efficient Tolerant Variation

Non-Volatile Logic Design Considerations for Energy Efficient Tolerant Variation

An Energy Aware Variation-Tolerant Writing Termination Control for STT-based Non Volatile Flip-Flops

A High Performance MRAM Cell Through Single Free-Layer Dual Fixed-Layer Magnetic Tunnel Junction

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