2010 23rd International Conference on VLSI Design 2010
DOI: 10.1109/vlsi.design.2010.63
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Design Considerations for BEOL MIM Capacitor Modeling in RF CMOS Processes

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“…Note that a larger overlapping area corresponds to a smaller f 0 due to the higher capacitance. The extracted quality factors Q C of three capacitors at low frequency are approximately 18-20, which are values comparable with those of general metal-insulator-metal (MIM) capacitors 22 ; these quality factors can be further increased by decreasing the electrode gap d. As the frequency increases, the quality factors of three capacitors reduce gradually and then reach zero at approximately 1.4 GHz. Because the building material (VisiJet EX 200) 17 serves as the dielectric material for the capacitors, its dielectric constant (ε r ) determines the performance of the capacitors; however, there are no prior reported data on the dielectric constant of VisiJet EX 200.…”
Section: Capacitorsmentioning
confidence: 62%
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“…Note that a larger overlapping area corresponds to a smaller f 0 due to the higher capacitance. The extracted quality factors Q C of three capacitors at low frequency are approximately 18-20, which are values comparable with those of general metal-insulator-metal (MIM) capacitors 22 ; these quality factors can be further increased by decreasing the electrode gap d. As the frequency increases, the quality factors of three capacitors reduce gradually and then reach zero at approximately 1.4 GHz. Because the building material (VisiJet EX 200) 17 serves as the dielectric material for the capacitors, its dielectric constant (ε r ) determines the performance of the capacitors; however, there are no prior reported data on the dielectric constant of VisiJet EX 200.…”
Section: Capacitorsmentioning
confidence: 62%
“…The measured S-parameters of the capacitors are converted to Y-parameters, and then the capacitor performances are extracted as 22 :…”
Section: Capacitorsmentioning
confidence: 99%