Design considerations for 60 GHz CMOS radios

60 GHz 130-nm CMOS second harmonic power amplifiers

“…In simulations the first stage has a conversion loss of about 4 dB, which should be added to the overall gain when comparing to non frequency converting PAs. Other published 60 GHz power amplifiers in CMOS show about 2-4 dB gain per stage [7], [11], [12], which our amplifiers also have in the last stage. For higher gain one or two more stages at 30 GHz or 60 GHz can be added to the PA.…”

Millimeter-wave soldier-to-soldier communications for covert battlefield operations

“…Signal recovery at the receiver is then performed through FFT processing with equalization followed by an IFFT stage. SC-FDE will then deliver performance similar to OFDM, with essentially the same overall complexity [9], but because SC modulation uses a single carrier it has the added advantages of lower PAPR and less sensitivity to both phase noise and carrier offset [10].…”

“…While they offer superior noise characteristics and high gain at mm-wave frequencies, they also suffer from a high cost per unit, poor integration, and low power efficiency. Complementary metal oxide semiconductor (CMOS) technology, on the other hand, will offer lower-cost mass production, improved integration, and increased power efficiency; however, CMOS front-end circuits will also have to address issues in power amplifier output, local oscillator phase noise, and low-noise amplifier design, as discussed in [10]. As a compromise, more recent advances in silicon germanium (SiGe) technology have now made it possible to build miniaturized low-cost mm-wave radio devices, such as the 60 GHz 0.13 mm SiGe BiC-MOS double-conversion superhetrodyne receiver and transmitter chipset recently developed by IBM [1].…”

A 60GHz digitally controlled phase shifter in CMOS

“…The phase shifter is implemented in the 65nm CMOS technology and occupies an active area of 0.2mm 2 . Figure 8 shows the photograph of the phase shifter.…”