Design Considerations and Performance Evaluation of 1200-V 100-A SiC MOSFET-Based Two-Level Voltage Source Converter

Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter prototype is developed during this study. The author(s) derive the loss calculation formula of the SiC auxiliary converter according to the system topology and principle and each part loss in this system can be calculated based on the device datasheet. Then, the static and dynamic characteristics of the SiC MOSFET module used in the system are tested, which aids in fully understanding the performance of the SiC devices and provides data support for the establishment of the PLECS loss simulation model. Additionally, according to the actual circuit parameters, the PLECS loss simulation model is set up. This simulation model can simulate the actual operating conditions of the auxiliary converter system and calculate the loss of each switching device. Finally, the loss of the SiC auxiliary converter prototype is measured and through comparison it is found that the loss calculation theory and PLECS loss simulation model is valuable. Furthermore, the thermal images of the system can prove the conclusion about loss distribution to some extent. Moreover, these two methods have the advantages of less variables and fast calculation for high power applications. The loss models may aid in optimizing the switching frequency and improving the efficiency of the system.

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“…To ensure the accuracy of the loss simulation model, it is necessary to test some key parameters of the devices [25][26][27][28].…”

Section: The Characteristics Of the 1700 V/225 A Sic Mosfetmentioning

confidence: 99%

Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

et al. 2017

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“…In contrast, the SiC module which is a unipolar device generating no tail current, and its freewheel diode which is SiC-SBD yielding the inverse recovery current at low-level hardly varies against the temperature. Furthermore, the switching loss is slightly reduced due to drop of the threshold voltage at higher temperature [4,9,10]. The result this time revealed that the full SiC module loss remained almost unchanged relative to the temperature when compared with that of the Si-IGBT module.…”

Section: Switching Evaluation Using High-speed Drive Circuitmentioning

confidence: 99%

Converter Using SiC‐MOSFET for Ultra‐High‐Speed Elevator

Katoh

Mori

Matsumoto

et al. 2017

Electrical Engineering Japan

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SUMMARY In this study, we developed a converter based on SiC (Silicon Carbide)‐MOSFET for use in ultra‐high‐speed elevators, with a reduced volume of 15% compared with the conventional converter. We succeeded in reducing the power loss of the converter unit by 56% compared to the conventional converter in one round trip under high temperature condition. Recently, because of their useful characteristics, wide‐gap semiconductors, such as SiC and GaN, have gained considerable attention for use in various applications in the power electronics systems. Therefore, we studied the use of a converter in elevator systems based on SiC‐MOSFET. We used a 1200 V/800 A SiC‐MOSFET module for the converter unit. We developed a prototype of the converter unit and the control panel by applying for the SiC‐MOSFET module for an ultra‐high‐speed elevator. As a result, the setting area of the control panel (main part) becomes less than 43% of the conventional panel. We tried to demonstrate the working of a 68‐kW elevator by applying the prototype control panel. Because of the characteristic of the switching loss of SiC‐MOSFET, the power loss of the converter unit has almost no dependence on temperature. An energy‐saving effect of approximately 17% was achieved in the total elevator system in one round trip under high‐temperature condition.

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“…SiC devices improve 2-level converter efficiency even whilst operating with increased switching frequency, thus also reducing filter bulk, loss and cost [7][8][9][10], compared with traditional IGBT 2-level converters. However, increased efficiency brought by SiC comes with the risk of increased EMI caused by the rapid switching transients, combined with the greater EMI generated as switching frequency is increased in order to reduce filter loss and bulk.…”

Section: Introductionmentioning

confidence: 99%

“…Both the SiC 2-level converter and the Si MOSFET MMC are suited to the bidirectional operation necessary to support low carbon electrical supply using energy storage in the form of Vehicle-to-Grid (V2G) energy transfer. Furthermore, it is noted that SiC MOSFET gate drive must be bipolar in order to achieve optimum performance [7][8][9][10]15], with careful design to prevent over-or under-voltage on the gate [15] and to reduce parasitic-induced oscillations [9]. Destruction as a result of unwanted device turn-on is of far greater risk in SiC MOSFETs compared with Si MOSFETs [15,16], while gate oxide reliability has been a challenge to SiC [17,18] with some improvement in gate oxide tolerance to temperature more recently [7].…”

Section: Introductionmentioning

confidence: 99%

LV Converters: Improving Efficiency and EMI Using Si MOSFET MMC and Experimentally Exploring Slowed Switching

Roscoe

Holliday

McNeill

et al. 2018

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-Widespread adoption of electric vehicles will require AC power distribution systems to accommodate high penetrations of power electronic loads, placing increasing demands on the power quality of gridconnected converters. Recent developments in devices and circuit topologies have potential to improve the intrinsic power quality of these grid interface inverters, reducing the need for passive filters and associated reactive power consumption. Wide bandgap devices, such as SiC, have recently gained much attention due to their low switching losses facilitating raised PWM frequencies. However the high cost of SiC together with electromagnetic interference (EMI) resulting from very rapid switching transitions necessary to realize low switching losses cause concern. Previous research in Si MOSFET modular multilevel converters (MMC) suggests a high efficiency alternative with potential for lower EMI. Si MOSFET MMC benefits are enhanced with parallel-connected devices and slowed switching, made possible by low effective switching frequency. This paper uses experimental results to explore the impact of parallel connection and slowed switching on Si MOSFET MMC losses, and presents improved Si MOSFET switching loss models to resolve inaccuracies observed with conventional Si MOSFET models. EMI is then compared between SiC and Si MMC using carefully controlled relative measurements of radiated EMI.

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Design Considerations and Performance Evaluation of 1200-V 100-A SiC MOSFET-Based Two-Level Voltage Source Converter

Cited by 86 publications

References 29 publications

Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

Converter Using SiC‐MOSFET for Ultra‐High‐Speed Elevator

LV Converters: Improving Efficiency and EMI Using Si MOSFET MMC and Experimentally Exploring Slowed Switching

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