Design considerations and performance evaluation of 1200 V, 100 a SiC MOSFET based converter for high power density application

Hazra, Samir; Madhusoodhanan, Sachin; Bhattacharya, Subhashish; Moghaddam, Giti Karimi; Hatua, Kamalesh

doi:10.1109/ecce.2013.6647272

Cited by 58 publications

(28 citation statements)

References 7 publications

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“…The 2-level three phase inverters connected to the side limbs of the transformers, forming three phase delta connection, use 1200 V/100 A SiC Mosfet modules (10) . For the middle limb winding of each transformer, H-bridges using 10 kV SiC-Mosfet and 10 kV anti-parallel JBS diodes are used for the systems in Fig.…”

Section: Dc-dc Converter Topologymentioning

confidence: 99%

“…In the aforementioned proposed topologies, the low voltage side converter is made up of 1200 V/100 A SiC Mosfet (10) and the high voltage side converter uses 10 kV SiC Mosfets (7) and 10 kV SiC 10 kV JBS diodes (7) for 5 kV dc bus modules, and 1700 V SiC Mosfets and 1700 V SiC Schottky diodes for 2.4 kV dc bus modules. The high voltage side NPC converters use 10 kV devices from (7).…”

Section: Switching Loss Estimationmentioning

confidence: 99%

“…The high voltage side NPC converters use 10 kV devices from (7). The switching and conduction loss data of 10 kV SiC Mosfet and 10 kV JBS diode is obtained from (7) and (15) respectively, the loss data for 1200 V/100 A SiC Mosfet data is obtained from (10). The switching loss data for 1700 V SiC Mosfet and 1700 V SiC Schottky Diode is obtained from (8).…”

Section: Switching Loss Estimationmentioning

confidence: 99%

“…The switching loss data for 1700 V SiC Mosfet and 1700 V SiC Schottky Diode is obtained from (8). The switching losses are estimated based on switching voltage of 620 V for 1200 V/100 A SiC mosfet device (10) , switching voltage of 5 kV for the 10 kV device (7) (15) based H-bridge (Fig. 6) and switching voltage of 1200 V for 1700 V device (8) based 3L-NPC converter.…”

Section: Switching Loss Estimationmentioning

confidence: 99%

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Low-Voltage PV Power Integration into Medium Voltage Grid Using High-Voltage SiC Devices

et al. 2015

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High voltage high power semiconductor devices are being used for grid integration of renewable energy sources. 1200 V/100 A SiC-MOSFETs, 1700 V SiC-MOSFETs, 1700 V SiC-Schottky diodes, 10 kV SiC-MOSFETs, and 10 kV JBS diodes have proved to be useful for high-voltage applications. High-voltage SiC devices enable high-switching frequency operation thus reducing the size of the parasitic element. This paper focuses on an alternative approach to the 0.9 MW PV power plant currently being constructed in Brazil. The objective of the use of high power SiC devices for integration of the PV power plant into 13.8 kV grid is to provide higher efficiency and reduced size and volume.

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Section: Dc-dc Converter Topologymentioning

confidence: 99%

Section: Switching Loss Estimationmentioning

confidence: 99%

Section: Switching Loss Estimationmentioning

confidence: 99%

Section: Switching Loss Estimationmentioning

confidence: 99%

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Low-Voltage PV Power Integration into Medium Voltage Grid Using High-Voltage SiC Devices

et al. 2015

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“…A 1200 V SiC-MOSFET [12] based two-level H-bridge is connected to the LV side [11]. An additional LV H-bridge feeds the secondary of an auxiliary transformer rated for lower primary voltage and power.…”

Section: Series Compensated Dab Topologymentioning

confidence: 99%

A series compensation enabled ZVS range enhancement of a dual active bridge converter for wide range load conditions

Tripathi

Krishna

Bhattacharya

2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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A novel ZVS range control technique using an auxiliary series transformer for a Dual Active Bridge (DAB) DC-DC converter is proposed. The auxiliary transformer fed with an additional H-bridge at the secondary, adds a phasecontrolled voltage in series with the main converter voltage either at the primary or secondary. This addition helps to control the reactive power flowing through the main converters of the DAB. Hence the power-factor of the main converters can be controlled in such a way that the DAB can maintain ZVS even at light loads. Also it operates at minimum reactive power at higher loads while it still operates in ZVS and thus results in higher efficiency on both extremes. The series transformer carries dominantly reactive power since the compensation angle is most often near quadrature. For medium/high power DAB, the cost and additional losses associated with the series circuit can be neglected due to significant efficiency improvement. The external inductor can be eliminated by using a series transformer designed with enough leakage inductance hence saving the additional magnetic cost. The proposed technique is validated with simulations followed by experiment on a hardware implementation. The technique is also simulated for a medium voltage DAB system with actual switching and magnetic data to bring out the efficiency improvements. I. INTRODUCTIONThe recent popularity of Solid State Transformer (SST) [1] and DC micro-grid for integrating renewable energy, has accelerated research in the high power DC-DC converters. The dual active bridge (DAB) is a zero voltage switching (ZVS) softswitched DC-DC converter providing voltage transformation and isolation. The single phase DAB is popular over three phase DAB due to its simplicity of the power topology and control. However, it has the disadvantages of relatively higher DC capacitor size at the output, higher peak current and flux in the transformer [2]. A PWM operation with phase transition can moderate the current shape in single phase DAB with Hbridge on both side. For medium voltage (MV) application, the input side can employ a half-bridge three-level topology to achieve PWM and cut down the device voltage rating. The DAB ZVS condition holds as long as the DAB current lags the primary but leads the secondary converter voltage. The DAB angle (φ) reduces with lighter loads. Hence the DAB ZVS range shrinks towards lighter loads [3]. If there is a deviation of the voltage-ratio (beyond cos(φ) or 1/ cos(φ) p.u.) from

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The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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Design considerations and performance evaluation of 1200 V, 100 a SiC MOSFET based converter for high power density application

Cited by 58 publications

References 7 publications

Low-Voltage PV Power Integration into Medium Voltage Grid Using High-Voltage SiC Devices

Low-Voltage PV Power Integration into Medium Voltage Grid Using High-Voltage SiC Devices

A series compensation enabled ZVS range enhancement of a dual active bridge converter for wide range load conditions

The role of power device technology in the electric vehicle powertrain

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