Design aspect of high power handling applications: metal contact switches

Jhanwar, Prachi; Bansal, Deepak; Pandey, Shilpi; Verma, Seema; Rangra, Kamaljit

doi:10.1007/s00542-014-2300-y

Cited by 5 publications

(4 citation statements)

References 6 publications

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“…Among these published works, the proposed switch possesses the lowest pull-in voltage (17.5 V). Compared with [3], the switch in this paper has poorer microwave performances and lower power handling capability but triple the bandwidth. What is more, the mentioned power handling in [3] only refers to calculated results.…”

Section: Methodsmentioning

confidence: 99%

“…Compared with [3], the switch in this paper has poorer microwave performances and lower power handling capability but triple the bandwidth. What is more, the mentioned power handling in [3] only refers to calculated results. In comparison with [8], the designed switch has similar bandwidth but better microwave performances.…”

Section: Methodsmentioning

confidence: 99%

“…The typical MEMS switch is a micro device which takes advantage of movable beam structure to achieve signal transmission or not. It has the advantages of negligibly DC power consumption [1], high isolation [2], and excellent power handling ability [3]. The earliest MEMS switch was designed and fabricated by Petersen [4].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique

Chu

Liao

2018

IET Microwaves, Antennas & Propagation

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This study presents a 1–40 GHz ultra‐wideband radio frequency (RF) micro‐electro‐mechanical systems (MEMS) direct‐contact switch based on a GaAs microwave monolithic integrated circuit (MMIC) process. The proposed switch utilises an inline cantilever membrane and a pull‐in electrode to achieve ‘off’ and ‘on’ states. It has been manufactured by micro‐machining, which is completely compatible with the GaAs MMIC process. An equivalent distributed parameter circuit model of the switch is established to analyse the microwave performances. The measured S‐parameters show that the isolation (S21) in the ‘off’ state is better than 22.5 dB from 1 to 40 GHz. In the ‘on’ state, the input reflection coefficient (S11) is less than −20.9 dB and the forward transmission coefficient (S21) is better than −0.25 dB over the complete band. In addition, the measured pull‐in voltage is ∼17.5 V. The measured maximum power handling capacity is 36.5 dBm. A lifetime of 2.4 × 107 switching cycles is also verified by this design. The whole structure is designed with the purpose of expanding its working bandwidth and achieving higher microwave performances over current state of art.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique

Chu

Liao

2018

IET Microwaves, Antennas & Propagation

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“…For applications like logic gates and data storage, NEM switches can be used [3]. Already existing metal switches suffers from the problem of stiction, self-actuation and electro migration [4]. Graphene NEM switches overcome the stiction problem with better reliability [5].…”

Section: Introductionmentioning

confidence: 99%

Finite Element Analysis of Graphene Oxide Based Nanoelectromechanical Capacitive Switch

Chaudhary¹,

Mudimela²

2019

Preprint

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The present work deals with finite element analysis (FEA) of a novel configuration of double clamped nanoelectromechanical (NEM) capacitive switch. Graphene oxide (GO), a graphene derivative has been used as suspended beam material in NEM switch for the first time. In the proposed work, GO is used as dielectric material having negative Poisson’s ratio value. The variation in capacitance has observed as the beam is pulled down by the actuating electrode. Analysis of pull-in voltage and von Mises stress are done using COMSOL Multiphysics, for standard and perforated GO NEM switch structures. The actuation voltage of 5.4 V for standard beam structure and 3.35 V for perforated beam structure have been achieved for the beam length of 1µm and width of 0.3 µm. The actuation voltage and von Mises stress value have reduced by making perforations in the beam. The comparative analysis of graphene and GO NEM switches have also been done in terms of von Mises stress to ensure the mechanical reliability. The von Mises stress values for GO NEM switch and graphene NEM switch are 500 MPa and 4.8 GPa respectively. This lesser value of von Mises stress in GO NEM switch makes it a good choice as beam material. The capacitive switch is demonstrated for standard and perforated beam structures. The variation in capacitance has observed as the beam is pulled down by the actuating electrode and at actuation voltage, the maximum value of capacitance obtained is 0.9403 pF.

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3D modeling of graphene oxide based nanoelectromechanical capacitive switch

Chaudhary

Mudimela

2020

Microsyst Technol

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Design aspect of high power handling applications: metal contact switches

Cited by 5 publications

References 6 publications

One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique

One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique

Finite Element Analysis of Graphene Oxide Based Nanoelectromechanical Capacitive Switch

3D modeling of graphene oxide based nanoelectromechanical capacitive switch

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