Design Approach to Radiation-Hardened I2L Gate Arrays

Bahraman, A.; Chang, Stephen; Romeo, D.; Schuegraf, K.

doi:10.1109/tns.1978.4329560

Cited by 6 publications

(1 citation statement)

References 5 publications

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“…Many studies of displacement damage mechanisms in bipolar transistors have been conducted, with emphasis placed on examining and predicting neutron effects. For example, see [33]- [41]. A key paper published in 1958 is that by Messenger and Spratt [33] in which an equation is presented for describing gain degradation in transistors.…”

Section: Uniform Displacement Damage Effectsmentioning

confidence: 99%

Review of displacement damage effects in silicon devices

Srour

Marshall

2003

IEEE Trans. Nucl. Sci.

604

350

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This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.

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Section: Uniform Displacement Damage Effectsmentioning

confidence: 99%