2021
DOI: 10.1109/tns.2021.3102481
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Design and Verification of a 6.25 GHz LC-Tank VCO Integrated in 65 nm CMOS Technology Operating up to 1 Grad TID

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Cited by 13 publications
(10 citation statements)
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“…Before irradiation, the frequency of the PQVCO ranges from 2.524 GHz to 2.786 GHz with a TR of 9.86% and the frequency of the SQVCO ranges from 2.635 GHz to 2.908 GHz with a TR of 9.88%. Similar to the TID experiments [28,29], the oscillation frequency of both the oscillators gradually increases with respect to TID and an increment of approximately 0.5% can be observed at the center frequency. The increase in the frequency can be accounted for primarily due to the decrease in the transconductances (g mP , g mN ) of the cross-coupled PMOS-NMOS pair with respect to TID [37].…”
Section: Resultssupporting
confidence: 75%
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“…Before irradiation, the frequency of the PQVCO ranges from 2.524 GHz to 2.786 GHz with a TR of 9.86% and the frequency of the SQVCO ranges from 2.635 GHz to 2.908 GHz with a TR of 9.88%. Similar to the TID experiments [28,29], the oscillation frequency of both the oscillators gradually increases with respect to TID and an increment of approximately 0.5% can be observed at the center frequency. The increase in the frequency can be accounted for primarily due to the decrease in the transconductances (g mP , g mN ) of the cross-coupled PMOS-NMOS pair with respect to TID [37].…”
Section: Resultssupporting
confidence: 75%
“…The effects of oxidetrap charges and interface trap charges on the varactors with respect to bias voltage are analyzed in detail in [42]. During irradiation, the radiation induced negative charges (oxide-trap and interface trap) result into reduction of the width of the depletion region, which in turn increases the capacitance of the varactors [29,43]. This radiation-induced effect is counteracting previous g m induced increase in frequency.…”
Section: Resultsmentioning
confidence: 99%
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