Design and Simulation of Ge-on-Si Photodetectors With Electrically Tunable Spectral Response

Iacovo, Andrea De; Ballabio, Andrea; Frigerio, Jacopo; Colace, Lorenzo; Isella, Giovanni

doi:10.1109/jlt.2019.2917590

Cited by 7 publications

(1 citation statement)

References 30 publications

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“…Since the absorption limit wavelength of silicon is 1100 nm, the germanium which has similar lattice structure with silicon, compatible with CMOS technology and has a longer absorption wavelength range is mainly used as an absorption material in silicon photonics circuits. In recent years, many works about Ge-on-Si photodetectors have been reported [8][9][10][11][12][13]. For integrated optical systems, high-power and high-speed devices were needed in some fields, such as microwave photonics, receivers in optical communications and optical sensing system [14,15].…”

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High Performance Ge-on-Si Photodetector With Optimized Light Field Distribution by Dual-Injection

et al. 2022

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This paper proposed a photodetector with a dual-injection structure. Input power is splitted into two beams by a 3dB beam splitter at the incident end and then coupled into the photodetector, which can make the light field distribution in the germanium absorption layer more uniform. With the same active area structure, the responsivity of the dual-injection structure can be increased by 45.73 % at 108.33 mW, the saturated optical power could be induced by 44.76 %, and the bandwidth can be improved by 6.74 GHz at 20 mW comparing with the single-injection structure. The dual-injection structure improves the performance of the device without increasing the complexity.

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