Design and simulation of fixed–fixed flexure type RF MEMS switch for reconfigurable antenna

Rao, K. Srinivasa; Kumar, Pradeep; Guha, Koushik; Sailaja, B. V. S.; Karuveettil, Vineetha; Baishnab, Krishna Lal; Sravani, K. Girija

doi:10.1007/s00542-018-3983-2

Cited by 37 publications

(6 citation statements)

References 16 publications

(12 reference statements)

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“…Overall performance enhancement of switch is done through impedance mapping within the system depending on form of dielectric constant with substrate material [21]. Moreover, preferred element is Silicon, since it is suitable substrate material due to its maximum resistivity, phase velocity, combined with cost-effective nature [22][23]. Greater value of dielectric constant for instance 11.9 extends towards minimal signal loss.…”

Section: Figure 6 Switch Selection Considering Substrate Materialsmentioning

confidence: 99%

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

Mohan¹,

Kavya²

2022

Int. j. commun. netw. inf. secur.

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The design of RF-MEMS Switch is useful for future artificial intelligence applications. Radio detection and range estimation has been employed with RF MEMS technology. Attenuators, limiters, phase shifters, T/R switches, and adjustable matching networks are components of RF MEMS. The proposed RF MEMS technology has been introduced in T/R modules, lenses, reflect arrays, sub arrays and switching beam formers. The uncertain RF MEMS switches have been faced many issues like switching and voltage alterations. This study aims in the direction of design, simulation, model along with RF MEMS switching analysis including consistent curving or meandering. The proposed RF MEMS Switch is a flexure form of the Meanders that attain minimal power in nominal voltage. Moreover, this research work highlights the materials assortment in case of beam along with signal-based dielectric. The performance analysis is demonstrated for various materials that have been utilized in the design purpose. Further, better isolation is accomplished at the range of -31dB necessary regarding 8.06V pull-in voltage through a spring constant valued at 3.588N/m, switching capacitance analysis has been found to be 103 fF at ON state and 7.03pF at OFF state and the proposed switch is optimized to work at 38GHz. The designed RF MEMS switch is giving 30% voltage improvement; switching frequency is improved by 21.32% had been attained, which are outperformance the methodology and compete with present technology.

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Section: Figure 6 Switch Selection Considering Substrate Materialsmentioning

confidence: 99%

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

Mohan¹,

Kavya²

2022

Int. j. commun. netw. inf. secur.

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“…The quality factor relates with spring constant, damping coefficient and resonant frequency. The technique used for minimizing it lives in choosing actuation electrode with different dimensions and fixed beam, so that te air gap between actuation electrode can be easily minimized [20]. The damping coefficient mathematically expressed as…”

Section: Effect Of Quality Factormentioning

confidence: 99%

Design and Analysis of a Uniform Meander RF MEMS Switch

Mohan¹

2021

TURCOMAT

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This paper projected to uniform meander RF MEMS capacitive shunt switch design and analysis. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The materials selection for the dielectric layer and beam is explained in this paper and also shown the performance depends on materials utilized for the design. The good isolation of -31dB is achieved for the pull-in voltage of 11.97V with a spring constant of 2.38N/m is produced by the switch and is obtained by the optimization process at a frequency of 38GHz.

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“…Switching time is defined as-"The time taken for the switch to change its condition from ON state to OFF state" [24] and it is majorly depending on the spring-constant of the meanders associated with the membrane and V pi of the switch.…”

Section: Switching and Release Time Analysismentioning

confidence: 99%

Low Pull-in-Voltage RF-MEMS Shunt Switch for 5G Millimeter Wave Applications

Kumar

Rao

Balaji

et al. 2021

Trans. Electr. Electron. Mater.

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RF MEMS switches have been employed in many commercial and defense applications due to their high potentiality at microwave and millimeter wave frequencies. In this paper, an RF MEMS shunt switch is designed with perforations and without perforations and simulated using iterative meanders for millimeter wave 5G applications. The proposed iterative meander offers a low spring-constant of 0.68 N/m and reduces the pull-in-voltage upto 1.8 V. The proposed perforated switch design is more reliable which operates with less transition time of 11.2 µs with a quality factor of 1.69. The switch possesses high capacitance ratio of 63. During ON condition, the switch shows low insertion loss of − 0.24 dB at 41 GHz and high isolation of − 46.7 dB at 38 GHz. The performance of the switch is analyzed by simulating it using COMSOL Multiphysics 5.2v (FEM tool). The obtained simulation results shows close approximation with the theoretical results and the switch is efficiently used for 5G millimeter wave applications.

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Design and simulation of fixed–fixed flexure type RF MEMS switch for reconfigurable antenna

Cited by 37 publications

References 16 publications

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

Design and Analysis of a Uniform Meander RF MEMS Switch

Low Pull-in-Voltage RF-MEMS Shunt Switch for 5G Millimeter Wave Applications

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