2022 IEEE Silchar Subsection Conference (SILCON) 2022
DOI: 10.1109/silcon55242.2022.10028834
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Design and Simulation of a Capacitive MOS Gas Sensor

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“…Also, for the F2 device, the value of R2, R3, C2, and C3 stabilized 15 min later and recovered to their original values after the CDA recovery cycles. Further, from equation (3) [61], it can be observed that capacitance is inversely proportional to the width of the depletion region (change in the depletion region width due to NH 3 adsorption is much smaller compared to the particle size so it is assumed that PANI and TiO 2 interface area remains constant), and as inferred on exposure to NH 3 , the capacitance value decreases (table 2).…”
Section: = Ementioning
confidence: 99%
“…Also, for the F2 device, the value of R2, R3, C2, and C3 stabilized 15 min later and recovered to their original values after the CDA recovery cycles. Further, from equation (3) [61], it can be observed that capacitance is inversely proportional to the width of the depletion region (change in the depletion region width due to NH 3 adsorption is much smaller compared to the particle size so it is assumed that PANI and TiO 2 interface area remains constant), and as inferred on exposure to NH 3 , the capacitance value decreases (table 2).…”
Section: = Ementioning
confidence: 99%