Abstract:This paper presents a novel dual current mirror based CMOS circuit for design and development of highly sensitive CMOS-MEMS integrated pressure sensors. The proposed pressure sensing structure has been designed using piezoresistive effect in MOSFETs and 5 μm standard CMOS technology parameters. The proposed structure includes six p-and nchannel MOSFETs and two square silicon diaphragms. MOSFETs MP1 and MN1 are the reference transistors and are placed on the substrate. The pressure sensing MOSFETs MP2 and MP3 a… Show more
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