Design and simulate a doherty power amplifier using GaAs technology for telecommunication applications

Barmala, Ehsan

doi:10.11591/ijeecs.v15.i2.pp845-854

Cited by 7 publications

(4 citation statements)

References 21 publications

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“…The PSO algorithm is represented by a finite search space that contains a set of randomly distributed particles that have a certain velocity and position that are represented by simple mathematical models. These models represent every movement of the particles to be the best place in the search space or the best place as an individual, in addition, there are different rules for updating different variables [35]. The main idea is to provide a search space containing an array of particles, and in addition to setting the initial velocity vector, it gives them a suitable initial position [36].…”

Section: Particle Swarm Optimization Algorithmmentioning

confidence: 99%

Performance parameters optimization of CMOS analog signal processing circuits based on smart algorithms

Rasheed

Motlak

2023

Bulletin EEI

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Designing ideal analogue circuits has become difficult due to extremely large-scale integration. The complementary metal oxide semiconductor (CMOS) analog integrated circuits (IC) could use an evolutionary method to figure out the size of each device. The CMOS operational transconductance amplifier (CMOS OTA) and the CMOS current conveyor second generation (CMOS CCII) are designed using advanced nanometer transistor technology (180 nm). Both CMOS OTA and CMOS CCII have high performance, such as a wide frequency, voltage gain, slew rate, and phase margin, to include very wide applications in signal processing, such as active filters and oscillators. The optimization approach is an iterative procedure that uses an optimization algorithm to change design variables until the optimal solution is identified. In this study, different sorts of algorithms the genetic algorithm (GA), particle swarm optimization (PSO), and cuckoo search (CS) are employed to boost and enhance the performance parameters. While decreasing the time required to develop a conventional operation amplifier's settling time. Some studies decrease the value of the power utilized at various frequencies. Others operate at extremely high frequencies, but their power consumption is greater than that of those operating at lower frequencies.

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Section: Particle Swarm Optimization Algorithmmentioning

confidence: 99%

Performance parameters optimization of CMOS analog signal processing circuits based on smart algorithms

Rasheed

Motlak

2023

Bulletin EEI

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“…The main purpose of power amplifier system is reducing significantly the power consumption to optimize the efficiency of system operation. One of the most important factors that impact on such efficiency, is power added efficiency (PAE) [1]- [7]. There are several switch-mode amplifier structures such as class-E, D, F, and inverse class-F power amplifier have been introduced to archive high efficiencies.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance

Vuong

Son

Lan

et al. 2022

IJPEDS

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Class-E power amplifiers are integrated into many applications because their simple design and high performance. The efficiency of the power amplifier is significantly impacted by the nonlinear characteristic of the switching device, which is not analyzed clearly in theory. The nonlinear drain-to-source parasitic capacitance of the power transistor and the linear external capacitance are both contributed to the optimum conditions for obtaining the exact shunt capacitance. In this paper, a high-efficiency class-E power amplifier with shunt capacitance is designed with the consideration of both linear and nonlinear capacitance. Furthermore, a mathematical analysis is derived to calculate the component values in order to design the class-E power amplifier. Consequently, high power-added efficiency of 94.6% is obtained using MRF9030 MOSFET transistor with parameter of 4W output power and 13.56 MHz operating frequency. Finally, the measurement result of a linear class-E power amplifier circuit is obtained to compare and realize the efficiency of the proposed work.

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“…In addition, it's able to operate at high frequencies [1]. The high-electron mobility transistors (HEMT) based on AlGaN-GaN have become very strong in recent years for the operating at high temperature, high frequency and high voltage [2]- [6]. This is due to the good properties of gallium nitrides (GaN), among them; we note that it has a wide band gap, a higher mobility of electron, as well as a very high velocity of saturation [7].…”

Section: Introductionmentioning

confidence: 99%

Thermal model developed of high electron mobility transistor AlGaN-GaN

Farti

Touhami

2022

IJEECS

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The performance of AlGaN-GaN HEMTs is influenced by the self-heating phenomenon, which leads to the power dissipation that is related to the increase of the local temperature of the device. The study of this increasing of the temperature is executed under different parameters, namely, low field mobility, velocity saturation, thermal conductivity of the substrate. A thermal model is developed to study the effect of this phenomenon on the current-voltage characteristics. Among the techniques to minimize the increase in the local temperature, we based on the good choice of the substrate used in the transistor. To highlight this proposal model, we have made a comparable study between the substrates of silicon and sapphire. Our analytical results are in a good agreement with published experimental data.

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Design and simulate a doherty power amplifier using GaAs technology for telecommunication applications

Cited by 7 publications

References 21 publications

Performance parameters optimization of CMOS analog signal processing circuits based on smart algorithms

Performance parameters optimization of CMOS analog signal processing circuits based on smart algorithms

Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance

Thermal model developed of high electron mobility transistor AlGaN-GaN

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